[B-1-1] Electrical Characterization of High-k Gated MOSFETs and Interfaces

T.P. Ma (1.Yale University Center for Microelectronic Materials and Structures, and Department of Electrical Engineering)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition

Ryosuke Iijima, Mariko Takayanagi, Takamitsu Ishihara, Takeshi Yamaguchi, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric

Riichiro Mitsuhashi, Kazuyoshi Torii, Hiroshi Ohji, Takaaki Kawahara, Atsushi Horiuchi, Hitoshi Takada, Masashi Takahashi, Hiroshi Kitajima (1.Semiconductor Leading Edge Technologies)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks

Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-1-5] 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs

Motofumi Saitoh, Nobuyuki Ikarashi, Heiji Watanabe, Shinji Fujieda, Hirohito Watanabe, Toshiyuki Iwamoto, Ayuka Morioka, Takashi Ogura, Masayuki Terai, Koji Watanabe, Makoto Miyamura, Toru Tatsumi, Taeko Ikarashi, Koji Masuzaki, Yukishige Saito, Yuko Yabe (1.System Devices Research Laboratories, NEC Corp.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] Carbon nanotube technologies for future ULSI via interconnects

Yuji Awano, Mizuhisa Nihei, Shintaro Sato, Akio Kawabata, Daiyu Kondo, Mari Ohfuti, Naoki Yokoyama (1.Fujitsu Limited, 2.Nanotechnology Research Center, Fujitsu Laboratories Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] Interface Adhesion and Phase Formation in Cu Interconnect

J. Koike, A. Sekiguchi, M. Wada (1.Dept. of Materials Science, Tohoku University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-2-3] Etch-byproduct Pore Sealing for ALD -TaN Deposition on Porous Low-k Film

Akira Furuya, Eiichi Soda, Hiroshi Okamura, Nobuyuki Ohtsuka, Miyoko Shimada, Naofumi Ohashi, Shinichi Ogawa (1.Semiconductor Leading Edge Technologies Inc. (Selete))

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-2-4] Recovery of Process-induced Damages of Porous Silica Low- k Films by TMCTS Vapor Annealing

Y. Oku, N. Fujii, Y. Seino, Y. Takasu, H. Takahashi, Y. Sonoda, T. Goto, H. Miyoshi, S. Takada, T. Kikkawa (1.MIRAI, Association of Super-Advanced Electronics Technologies (ASET), 2.MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 3.Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, 4.Research Center for Nanodevices and Systems, Hiroshima University)

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-2-5] A Metallurgical Prescription Suppressing Stress-induced Voiding (SIV) in Cu lines

Mari Abe, Naoya Furutake, Shinobu Saito, Naoya Inoue, Yoshihiro Hayashi (1.System Devices Research Laboratories, NEC Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download