[B-10-3] Planar Double Gate CMOS transistors with 40nm metal gate for multipurpose applications

M. Vinet, T. Poiroux, J. Widiez, J. Lolivier, B. Previtali, C. Vizioz, B. Guillaumot, P. Besson, J. Simon, F. Martin, S. Maitrejean, P. Holliger, B. Biasse, M. Casse, F. Allain, A. Toffoli, D. Lafond, J.M. Hartmann, R. Truche, V. Carron, F. Laugier, A. Roman, Y. Morand, D. Renaud, M. Mouis, S. Deleonibus (1.CEA/DRT-LETI, 2.STMicroelectronics, 3.IMEP (UMR CNRS/INPG/UJF))

2004 International Conference on Solid State Devices and Materials |PDF Download

[B-10-4] A Vertical SOI CMOS Technology with p-MOS on Si Film and n-MOS on Bulk Base

Shengdong Zhang, Xinnan Lin, Ruqi Han, Xusheng Wu, Mansun Chan (1.Institute of Microelectronics, Peking University, 2.The Hong Kong University of Science and Technology)

2004 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Experimental Clarification of Hydrogen-related Mechanism in NBT Degradation

Yuichiro Mitani, Hideki Satake (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode

Jang Hoan Sim, Rino Choi, Byoung Hun Lee, Chadwin Young, Peter Zeitzoff, Gennadi Bersuker (1.International SEMATECH, 2.IBM assignee)

2004 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices

Chadwin D. Young, Yuegang Zhao, Michael Pendley, Byoung Hun Lee, Kenneth Matthews, Jang Hoan Sim, Rino Choi, Gennadi Bersuker, George A. Brown (1.International SEMATECH, 2.IBM and Assignee, 3.Keithley Instruments)

2004 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Determination of Polysilicon Gate Doping in High-κ or Oxynitride MOSFETs with Gate Electrode Fermi-Level Pinning

Khaled Z. Ahmed, Philip A. Kraus (1.Front End Products Group, Applied Materials, Inc.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] High-Perfection Approaches to Si-based Devices through Strained Layer Epitaxy

J.C. Sturm, Haizhou Yin, R L. Peterson, K.D. Hobart, F.J. Kub (1.Princeton Institute for the Science and Technology of Materials and Department of Electrical Engineering, 2.IBM Watson Research Center, 3.Naval Research Laboratory)

2004 International Conference on Solid State Devices and Materials |PDF Download

[C-4-2] Analysis and modeling of size dependent mobility enhancement due to mechanical stress

Takuji Tanaka, Ken-ichi Goto, Ryou Nakamura, Shigeo Satoh (1.FUJITSU Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[C-4-3] Fabrication and characteristics of Germanium-on-Insulator

Yu-Lin Chao, Roland Scholz, Manfred Reiche, Ulrich M. Gosele, Jason C. S. Woo (1.Univ. of California, Los Angeles, Dept. of Electrical Engineering, School of Eng., 2.Max-Plank Institute of Microstructure Physics)

2004 International Conference on Solid State Devices and Materials |PDF Download

[C-4-4] Advantages of Ge (111) Surface for High Quality HfO2/Ge Interface

Masahiro Toyama, Koji Kita, Kentaro Kyuno, Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF Download