The Japan Society of Applied Physics

2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

Sep 14, 2004 - Sep 17, 2004
Tower Hall Funabori, Tokyo, Japan

473 results (121 - 130)

[D-4-2] A Highly Scalable Split-Gate SONOS Flash Memory with Programmable-Pass and Pure-Select Transistors for Sub-90-nm Technology

Yong Kyu Lee, Byung Yong Choi, Jae Sung Sim, Ki Whan Song, Jong Duk Lee, Byung-Gook Park, Donggun Park, Chilhee Chung (1.Inter-university Semiconductor Research Center and School of Electrical Engineering, Seoul National University, 2.C&M, System LSI and, 3.Device Research Team, R&D Center, Samsung Electronics Co.)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-4-3] Flash EEPROM Tunneling Oxide Reliability Characterization under the test of FN Constant Current Stress and Program/Erase Cycling by using ISSG Nitrided Oxide

Chao-Wei Kuo, Cheng-Tung Huang, Jih-Wen Chou, Shyang-Ming Tzeng, Chia-Ping Lai, Tzeng-Wen Tzeng, Chi-Lun Liu, Yih-En Huang, Wei-Zhe Wong, Hsiang-Chung Chang, Ching-Sung Yang, Saysamone Pittikoun, Chih-Hsun Chu, Chih-Chen Cho (1.Powerchip Semiconductor Corporation, 2.Ememory Technology Incorporation)

2004 International Conference on Solid State Devices and Materials |PDF Download

[D-6-1] Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs

Daigo Kikuta, Ryohei Takaki, Junya Matsuda, Masaya Okada, Xin Wei, Jin-Ping Ao, Yasuo Ohno (1.Dept. of Electrical and Electronic Eng., The University of Tokushima, 2.Satellite Venture Business Laboratory, The University of Tokushima)

2004 International Conference on Solid State Devices and Materials |PDF Download

473 results (121 - 130)