[A-1-1] Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application

M. Niwa, R. Mitsuhashi, K. Yamamoto, S. Hayashi, Y. Harada, A. Rothchild, T. Hoffmann, S. Kubicek, S. De Gendt, M. Heyns, S. Biesemans, M. Kubota (1.Matsushita assignee at IMEC, 2.Semiconductor Company, Matsushita Electric Ind.,Co., Ltd., 3.IMEC vzw)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT

M. Mizutani, T. Hayashi, M. Inoue, J. Yugami, K. Nomura, J. Tsuchimoto, Y. Ohno, M. Yoneda (1.Process Technology Development Div., RENESAS Technology Corp., 2.Wafer Process Engineering Dept.(1), RENESAS Semiconductor Engineering Corp.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Extendibility of High Mobility HfSiON Gate Dielectrics

Seiji Inumiya, Takayoshi Miura, Kiyoshi Shirai, Takeo Matsuki, Kazuyoshi Torii, Yasuo Nara (1.Semiconductor Leading Edge Technologies, Inc. (Selete), 2.Hitachi, Ltd., Central Research Laboratory)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics

Ryosuke Iijima, Mariko Takayanagi, Takeshi Yamaguchi, Masato Koyama, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs

Hiroyuki Ota, Arito Ogawa, Masaru Kadoshima, Kunihiko Iwamoto, Wataru Mizubayashi, Kenji Okada, Toshihide Nabatame, Hideki Satake, Akira Toriumi (1.MIRAI-ASRC, AIST, 2.MIRAI-ASET, AIST, 3.The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics

B. H. Lee, R. Choi, S.C. Song, J. Sim, C.D. Young, G. Bersuker, H.K. Park, H. Hwang (1.SEMATECH, 2.IBM assignee, 3.Gwangju Institute of Science and Technology)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions

Masahiro Koike, Tsunehiro Ino, Yuuichi Kamimuta, Yuichiro Mitani, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate Research&Development Center, Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON

Izumi Hirano, Takeshi Yamaguchi, Yuichiro Mitani, Ryosuke Iijima, Katsuyuki Sekine, Mariko Takayanagi, Kazuhiro Eguchi, Noburu Fukushima (1.Advanced LSI Technology Laboratory, Corporate R&D Center, 2.Semiconductor Company, Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks

Siddarth A. Krishnan, Manuel Quevedo, Rusty Harris, Paul D. Kirsch, Rino Choi, Byoung Hun Lee, Gennadi Bersuker, Jeff Peterson, Hong-Jyh Li, Chadwin Young, Jack C. Lee (1.SEMATECH, 2.TI, 3.AMD, 4.IBM and, 5.Infineon, 6.Professor, Electrical Engg. The University of Texas at Austin)

2005 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces

Yuuichi Kamimuta, Masato Koyama, Tsunehiro Ino, Katsuyuki Sekine, Motoyuki Sato, Kazuhiro Eguchi, Mariko Takayanagi, Mitsuhiro Tomita, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 3.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)

2005 International Conference on Solid State Devices and Materials |PDF Download