[C-2-5] A 0.18 μm CMOS Impulse Radio Based UWB Transmitter for Global Wireless Interconnections of 3D Stacked-Chip System

M. Fukuda, P. K. Saha, N. Sasaki, M. Nitta, T. Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Large-Scale Quantum Computing Emulation Based on Unitary Macro-Operations

Yosuke Goto, Minoru Fujishima (1.School of Frontier Sciences, The University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Random Number Generator with 0.3MHz Generation Rate using Non-Stoichiometric SixN MOSFET

Mari Matsumoto, Ryuji Ohba, Shinichi Yasuda, Ken Uchida, Tetsufumi Tanamoto, Shinobu Fujita (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Nearest-Euclidean-Distance Search Associative Memory with Fully Parallel Mixed Digital-Analog Match Circuitry

M. A. Abedin, Y. Tanaka, A. Ahmadi, T. Koide, H. J. Mattausch (1.Research Center for Nanodevices and Systems, Hiroshima University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Scaling Trends and Mitigation Techniques for Soft Errors in Flip-Flops

Taiki Uemura, Yoshiharu Tosaka, Shigeo Satoh, Keiji Takahisa, Kichiji Hatanaka (1.Fujitsu Laboratories Ltd., 2.Research Center for Nuclear Physics, Osaka University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[C-5-1] Mechanisms of Resistance Switching Memory Effect in Oxides

Masashi Kawasaki, Akihito Sawa, Yoshnori Tokura (1.Institute for Materials Research, Tohoku University, 2.Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Department of Applied Physics, University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory

Heng-Yuan Lee, Pang-Shiu Chen, Ching-Chiun Wang, Siddheswar Maikap, Pei-Jer Tzeng, Cha-Hsin Lin, Lurng-Shehng Lee, Ming-Jinn Tsai (1.Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, 2.Department of Materials Science and Engineering, MingShin University of Science & Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] SiOx/β-SiC/Si MIS Resistive Memory Devices Formed by One- and Two-Stage Oxidation of β-SiC

Masatsugu Shouji, Toshiaki Nagashima, Yoshiyuki Suda (1.Graduate School of Engineering, Tokyo University of Agriculture and Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] Future Outlook of Floating Gate Flash Memory

Fumitaka Arai (1.Flash Memory Device Technology Department, Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[C-6-2] An Advanced Air Gap Process for MLC flash memories reducing Vth interference and realizing high reliability.

K. Tsukamoto, T. Murata, T. Fukumura, F. Ohta, T. Yoshitake, S. Shimizu, Y. Ikeda, K. Asai, M. Shimizu, O. Tsuchiya (1.Renesas Technology Corp.)

2006 International Conference on Solid State Devices and Materials |PDF Download

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