[F-3-5L] Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures

Hiroyuki Kusaka, Nobuyuki Sano (1.Institute of Applied Physics, University of Tsukuba)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-5-1] Simulation of Atomic Scale Effects and Fluctuations in Nano-Scale CMOS

Asen Asenov, Andrew R. Brown, Gareth Roy, Craig Alexander, Antonio Martinez (1.Device Modelling Group, Department of Electronics and Electrical Engineering The University of Glasgow)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-5-2] Improvement of Device Characteristics Variation by using a Body-Bias Controlling Technology Based on a Hybrid Trench Isolated SOI

Y. Maki, Y. Hirano, M. Tsujiuchi, T. Iwamatsu, O. Ozawa, T. Ipposhi, Y. Inoue (1.Process Technology Development Div. Renesas Technology Corp., 2.SoC Design Technology Div. Renesas Technology Corp.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-5-3] 3D Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

S. Markov, A. R. Brown, B. Cheng, G. Roy, S. Roy, A. Asenov (1.EEE Dept., Univ. of Glasgow)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-6-1] NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond

C T Huang, L S Jeng, W H Hung, S F Ting, K H Lee, M L Tseng, Osbert Cheng, C W Liang (1.United Microelectronics Corp. (UMC), CRD Logic Division)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-6-2] NBT Stress Induced Anomalous Drain Current Instability in HfSiON pMOSFETs Arising from Bipolar Charge Trapping

C. J. Tang, H.C. Ma, C. T. Chan, Tahui Wang, H. C.-H. Wang (1.Dept. of Electronics Engineering, National Chiao-Tung University, 2.Taiwan Semiconductor Manufacturing Company)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-6-3] Impact of Silicon Film Thickness on LF Noise in SOI Devices

Leily Zafari, Jalal Jomaah, Gerard Ghibaudo (1.IMEP, MINATEC-INPG)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-6-4L] Comparison of Threshold Voltage Fluctuations in Sub-45 nm Planar MOSFET and Thin-Buried-Oxide SOI Devices

Yiming Li, Shao-Ming Yu (1.Department of Communication Engineering, National Chiao Tung University, 2.Department of Computer Science, National Chiao Tung University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-7-1] The incorporation effect of thin Al2O3 layers on ZrO2-Al2O3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices

Moon Sig Joo, Seung Ryong Lee, Hongseon Yang, Kwon Hong, Se-Aug Jang, Jaehyoung Koo, Jaemun Kim, Seungwoo Shin, Myungok Kim, Seungho Pyi, Nojung Kwak, Jin-Woong Kim (1.R&D Division, Hynix Semiconductor Inc.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-7-2] High-κ HfO2/Al2O3 nanolaminated charge trapping layers for high performance flash memory device applications

S. Maikap, P. J. Tzeng, T.-Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, L. S. Lee, J.-R. Yang, M.-J. Tsai (1.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 2.Department of Material Science Engineering, National Taiwan University)

2006 International Conference on Solid State Devices and Materials |PDF Download

566 results (221 - 230)

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