[A-8-1] Electrostatic coupling between two double-quantum dots studied by resonant tunneling current

Gou Shinkai、Toshimasa Fujisawa、Toshiaki Hayashi、Yoshiro Hirayama (1.NTT Basic Research Laboratories, NTT Corporation、2.Department of Physics, Tokyo Institute of Techonology、3.Department of Physics, Tohoku University、4.SORST-JST)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-2] Photo Illumination Effect on Single-Electron-Tunneling Current Through a Thin Bicrystal SOI FET

R. Nuryadi、Z. A. Burhanudin、R. Yamano、T. Ishino、Y. Ishikawa、M. Tabe (1.Research Institute of Electronics, Shizuoka University、2.Department of Materials Engineering, University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-3] Fabrication of Ge Quantum-dots by Oxidation of Si1-xGex-on-insulator Nanowires and its Applications to Resonant Tunneling Diodes and Single-electron/Single-hole Transistors

Wei-Ting Lai、Pei-Wen Li (1.Department of Electrical Engineering, National Central University)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-4] Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires

D. Moraru、Y. Ono、H. Inokawa、K. Yokoi、R. Nuryadi、H. Ikeda、M. Tabe (1.Research Institute of Electronics, Shizuoka University、2.NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation.)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-5] SET-based Flexible Multi-valued NAND and NOR Gates for Half-Adder

C. K. Lee、S. J. Kim、S. J. Choi、J. H. Hwang、R. S. Chung、J. J. Lee、M. S. Kim、S. J. Shin、J. B. Choi、Y. S. Yu、H. W. Kye、B. N. Song (1.Dept. of Physics & Institute for Nano Science & Technology, Chungbuk National University、2.Dept. of Information & Control Engineering, Hankyong National University、3.EXCEL Semiconductor Inc.)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-6] Multi-Functionality of Novel Structured Tunneling Devices

Woo Young Choi、Jae Young Song、Jong Pil Kim、Jong Duk Lee、Byung-Gook Park (1.Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-1] Organic Molecular Wires

Peter Hadley、Murat Durkut (1.Kavli Institute of NanoScience)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-2] Possible Non-equilibrium Kondo Effect in a Nanocrystalline Silicon Point-Contact Transistor

M. A. H. Khalafalla、H. Mizuta、S. Oda、Z. A. K. Durrani (1.Quantum Nanoelectronics Research Centre, Tokyo Institute of Technology、2.Department of Engineering, University of Cambridge)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-3] Low Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-bar Devices

Kei Takashina、Benjamin Gaillard、Yukinori Ono、Yoshiro Hirayama (1.NTT Basic Research Laboratories, NTT Corporation、2.SORST-JST)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-4] Detection of Magnetic Domain Wall in a Permalloy Wire by the Local Hall Effect

Yoshiaki. Sekine、Tatsushi. Akazaki、Junsaku. Nitta (1.NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation、2.Graduate School of Engineering, Tohoku University、3.CREST-JST, Japan Science and Technology Agency)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード