[P-1-18] Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes

T. Matsukawa、Y. X. Liu、K. Endo、M. Masahara、K. Ishii、H. Yamauchi、J. Tsukada、E. Suzuki (1.Nanoelectronics Research Institute, AIST)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-19] Nitrogen Induced Extrinsic States (NIES) in Effective Work Function Instability of TiNx/SiO2 and TiNx/HfO2 Gate Stacks

Chao-Sung Lai、Jer-Chyi Wang、Shih-Cheng Yang、Jian-Yi Wong、Shing-Kan Peng (1.Department of Electronic Engineering, Chang Gung University、2.Nanya Technology Corporation, Hwa-Ya Technology Park)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-20] Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD

Wenwu Wang、Toshihide Nabatame、Yukihiro Shimogaki (1.Department of Materials Engineering, The University of Tokyo、2.MIRAI-ASET, AIST, Tsukuba West 7)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-21] Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes

Daisuke Ikeno、Kouhei Furumai、Hiroki Kondo、Mitsuo Sakashita、Akira Sakai、Masaki Ogawa、Shigeaki Zaima (1.Nagoya University, Graduate School of Engineering、2.Nagoya University, Center for Cooperative Research in Advanced Science & Technology)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-22] Stress-Relaxation Process during Post-Annealing in SGOI Formed by H+ Irradiation and Oxidation-Induced Ge Condensation

Masanori Tanaka、Taizoh Sadoh、Koji Matsumoto、Toyotsugu Enokida、Masanobu Miyao (1.Department of Electronics, Kyushu University、2.SUMCO、3.Analyses & Evaluation Center, Fukuryo Semicon Engineering Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-23] Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation

Hiroyuki Kageshima、Masashi Uematsu、Toru Akiyama、Tomonori Ito (1.NTT Basic Research Laboratories, NTT Corporation、2.Dept. of Physics Engineering, Mie Univ.)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-24] Low-Leakage-Current Ultra-thin SiO2 Film by Low-Temperature Neutral Beam Oxidation

Toru Ikoma、Chihiro Taguchi、Seiichi Fukuda、Kazuhiko Endo、Heiji Watanabe、Seiji Samukawa (1.Institute of Fluid Science, Tohoku University、2.National Institute of Advanced Industrial Science and Technology、3.Graduate School of Engineering, Osaka University)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-25] Rate-Limiting Reaction of Layer-by-Layer Oxidation on Si(001) Surfaces: Dependence on the First Oxide Layer Growth Kinetics

Shuichi Ogawa、Yuji Takakuwa (1.Institute of Multidisciplinary Research for Advanced Materials, Tohoku University)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-26] Xe Preamorphization Implantation for Transient Enhanced Diffusion Suppression of As in Ge Substrate

T. Fukunaga、K. Hosawa、T. Hosoi、K. Shibahara (1.Research Center for Nanodevices and Systems, Hiroshima University、2.Graduate School of Advanced Sciences of Matter, Hiroshima University)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-27] Low Leakage Current and Low Resistivity p+n Diodes on Si(110) Fabricated by Ga+/B+ Combination I/I and Low Temperature Annealing

Hiroshi Imai、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

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