[E-3-4] Electrical and Optical Properties of an n-Channel GaN Schottky Barrier MISFET

Heon-Bok Lee、Hyun-Ick Cho、Hyun-Su An、Jung-Hee Lee、Sung-Ho Hahm (1.School of Electrical Engineering and Computer Science, Kyungpook National University)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-1] Atmospheric In-situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised Extension NMOSFET

Tetsuya Ikuta、Yuki Miyanami、Shigeru Fujita、Hayato Iwamoto、Shingo Kadomura (1.Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-2] Self-Heating Induced Germanium Outdiffusion and Non-Local Channel Degradation in the Strained-Si/SiGe N-MOSFET subjected to Channel Hot-Electron Stress

T. W. H. Phua、D. S. Ang、C. H. Tung、C. H. Ling (1.National University of Singapore, Department of Electrical and Computer Engineering、2.Nanyang Technological University, School of Electrical and Electronic Engineering、3.Institute of Microelectronics)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-3] Ni(alloy)-germanosilicide contact technology for Si1-xGex (x=0.20-0.5) junctions

K.L. Pey、L.J. Jin、W. K. Choi、H. P. Yu、D. A. Antoniadis、E. A. Fitzgerald、D.Z. Chi、D. M. Isaacson (1.SMA、2.Nanyang Technological University、3.National University of Singapore、4.MIT、5.IMRE)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-4] Impacts of Si Crystal Orientation on NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration

Masakatsu Tsuchiaki、Akira Nishiyama (1.Corporate Research & Development Center, Toshiba Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-1] Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates

Hiroshi Itokawa、Haruko Akutsu、Akiko Nomachi、Hiroshi Oono、Toshihiko Iinuma、Kyoichi Suguro (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、2.Corporate R&D Center, Toshiba Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-2] A Novel Laser Annealing Process for Advanced CMOS with Suppressed Gate Depletion and Ultr a-shallow Junctions

Akio Shima、Toshiyuki Mine、Lucia Feng、Xiaoru Wang、Yun Wang、Kazuyoshi Torii (1.Central Research Laboratory, Hitachi, Ltd.、2.Ultratech Inc.)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-3] Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy

Masayasu Nishizawa、Leonid Bolotov、Toshihiko Kanayama (1.MIRAI-Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST))

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-1] Enhancement Mode GaAs n-MOSFET with High-k Dielectric

Michael Yakimov、Vadim Tokranov、Rama Kambhampati、Sergei Koveshnikov、Wilman Tsai、Feng Zhu、Jack Lee、Serge Oktyabrsky (1.University at Albany ? SUNY, College of Nanoscale Science and Engineering、2.Intel corp.、3.The University of Texas at Austin, Department of Electrical and Computer Engineering)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-2] Investigation of GaAs MOSFETs with Gate Oxide Grown Using Photoelectrochemical Oxidation Method

Hsin-Ying Lee、Yuan-Fu Lin、Ming-Yi Wang、Ching-Ting Lee (1.Institute of Electro-Optical and Materials Science, National Formosa University、2.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード