[F-1-5] Impact of (111)-Oriented SrRuO3/Pt Tailored Electrode for Highly Reproducible Preparation of MOCVD-PZT Film for High Density FeRAM

N. Menou、H. Kuwabara、H. Funakubo (1.Tokyo Institute of Technology, Department of Innovative and Engineered Materials)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-1] Overview and Future Challenges eDRAM Technologies

H. sugimura、T. Wake、K. Inoue、M. Hamada、H. Shirai、S. Arai、M. Takeuchi、T. Sakoh、M. Sakao、T. Tanigawa (1.Advanced Device Development Division, NEC Electronics Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-2] A Highly Reliable MIM Technology with non-Crystallized HfOx Dielectrics Using Novel MOCVD Stacked TiN Bottom Electrodes

Takashi Ohtsuka、Yoshiyuki Shibata、Hideyuki Arai、Hideo Ichimura、Seiji Matsuyama、Keita Uchiyama、Jun Suzuki、Akihiko Tsuzumitani、Kenji Yoneda、Yukiko Hashimoto、Takashi Nakabayashi、Eiji Fujii (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.、2.The Engineering Department, Panasonic Semiconductor Engineering Co., Ltd.)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-3] Robust and Cost-Effective MIS-Al2O3/SiON Double-Layered Capacitor Technology for Sub-90 nm DRAMs

Osamu Tonomura、Hirotaka Hamamura、Hiroshi Miki (1.Central Research Laboratory, Hitachi Ltd.)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-4] Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM

Min Gyu Sung、Kwan-Yong Lim、Heung-Jae Cho、Seung Ryong Lee、Se-Aug Jang、Yong Soo Kim、Moon-Sig Joo、Ju-Hee Lee、Tae-Yoon Kim、Hong-Seon Yang、Seung-Ho Pyi、Jin Woong Kim (1.Memory R&D Division, Hynix Semiconductor Inc.)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-5] Gate Workfunction Engineering of Bulk FinFETs for Sub-50 nm DRAM Cell Transistors

Ki-Heung Park、Kyoung Rok Han、Young Min Kim、Jong-Ho Lee (1.School of EECS, Kyungpook National University)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-3-1] Ohm's Law from a Transmission Viewpoint

Kenji Natori、Tomo Shimizu (1.University of Tsukuba, Institute of Applied Physics、2.CREST, JST)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-3-2] A Picture of Quasi-Ballistic Transport in Nanoscale MOSFETs

Hideaki Tsuchiya、Kazuya Fujii、Takashi Mori、Tanroku Miyoshi (1.Kobe University, Department of Electrical and Electronics Engineering)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-3-3] Intrinsic Delay of Nanoscale MOSFETs under Ballistic Transport

A. Tsuda、T. Kunikiyo、T. Okagaki、T. Watanabe、M. Tanizawa、K. Ishikawa、H. Nunogami、A. Uchida (1.Device IP Development Dept.、2.Advanced Device Development Dept. Renesas Technology Corp.)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-3-4] The effect of side-traps on ballistic transistor in Kondo regime

Tetsufumi Tanamoto、Ken Uchida、Shinobu Fujita (1.Corporate R&D Center, Toshiba Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード