[C-6-3] Electrical Properties of the Graphitic Carbon Contacts on Carbon Nanotube Field Effect Transistors

M. Tamaoki¹, S. Kishimoto^1,2, Y. Ohno¹, T. Mizutani¹ (1.Nagoya Univ., 2.Nagoya Univ. Venture Business Lab. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-6-4] Change of the Electronic Conductivity of CNTs Caused by a Three-dimensional Strain Field

M. Ohnishi¹, Y. Suzuki¹, H. Kawakami¹, K. Suzuki¹, H. Miura¹ (1.Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-6-5] Chirality-Dependent Reactivity to O2 of Single-Walled Carbon Nanotubes

B. Liu^1,2, H. Jiang¹, A. Krasheninnikov³, A. Nasibulin¹, W. Ren², C. Liu², H.M. Cheng², E. Kauppinen¹ (1.Aalto Univ. , Finl, 2.Chenyang Nat. Lab. Materials Science, IMR, CAS , China, 3.Univ. of Helsinki , Finl)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-6-6] Towards the Growth of Monochiral Single-walled Carbon Nanotubes on MgO supported FeCu Bimetallic Catalysts

M. He¹, A. Chernov², E. Obraztsova², H. Jiang¹, J. Lentonen¹, E. Kauppinen¹ (1.Aalto Univ. , Finland, 2.A.M. prokhorov General Physics Inst. RAS , Russia)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-7-1] Strain Engineered Graphene: Current Trends and Prospects

V. M. Pereira¹ (1.National Univ. of Singapore , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-7-2] Electron Transport in Graphene with One-dimensional Local Strain

H. Tomori^1,2, H. Karube^1,2, Y. Ootuka¹, A. Kanda^1,2 (1.Univ. Tsukuba, 2.TIMS , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-7-3] Tuning semiconducting property of bilayer graphene by ionic molecules

N. T. Cuong^1,3, M. Otani^1,3, S. Okada^2,3 (1.AIST, 2.Univ. of Tsukuba, 3.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-7-4] Definite Observation of Interfacial Charge Transfer in Graphene Transistor by Using Soft X-ray 3D Scanning Photoelectron Microscopy

H. Fukidome¹, N. Nagamura^2,3, K. Horiba^2,3,4, S. Toyoda², S. Kurosumi², T. Shinohara², T. Ide¹, M. Suemitsu¹, K. Nagashio², A. Toriumi², M. Oshima^2,4 (1.Tohoku Univ., 2.Univ. of Tokyo, 3.Synchrotron Radiation Research Organzation of Univ. of Tokyo, 4.CREST-JST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-8-1] Epitaxial Graphene: Synthesis, Integration, and Nanoscale Devices

J. A. Robinson¹, M. J. Hollander¹, M. La Bella Ⅲ¹, K. A. Trumbull¹, R. Cavalero¹, D. W. Snyder¹, H. Madan¹, S. Datta¹ (1.The Pennsylvania State Univ. , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[C-8-2] Epitaxial graphene resonators obtained by electrochemical etching

M. Takamura¹, K. Furukawa¹, H. Okamoto¹, S. Tanabe¹, H. Yamaguchi¹, H. Hibino¹ (1.NTT Basic Research Labs. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download