[E-6-1] Design-friendly scalability of cost-effective 28LP Tech. platform featuring 2nd generation gate-first HK/MG transistors without eSiGe

H. Fukutome¹, S. D. Kwon¹, S. Maeda¹, S. Paak¹ (1.System LSI business, Samsung Electronics Co., Ltd. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-6-2] Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs and Bulk MOSFETs

T. Mizutani¹, Y. Yamamoto², H. Makiyama², T. Tsunomura², T. Iwamatsu², H. Oda², N. Sugii², T. Hiramoto¹ (1.Univ. of Tokyo, 2.Low-power Electronics Association & Project , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-6-3] Analysis of Read Margin Improvement for Low Voltage SRAM Composed of Nano-Scale MOSFETs with Ideal Subthreshold Factor and Small Variability

C. Tanaka¹, M. Saitoh¹, K. Ota¹, T. Numata¹ (1.Toshiba Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-6-4] A Comparative Study of Minimal Supply Voltage of 6T-SRAM at the 16nm node using MASTAR into a Conventional CAD Environment

J. Lacord^1,2, G. Ghibaudo², F. Boeuf¹ (1.STMicroelectronics, 2.IMEP-LAHC Lab. , France)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-6-5L] Optimization of 14-nm Node Bulk/SOI FinFETs for SoC Platform: Thermal Conductivity, Operation Temperature, and Analog Performance Analysis

T. Takahashi^1,2, N. Beppu^1,2, S. Oda¹, K. Uchida^1,2 (1.Tokyo Inst. Tech., 2.Keio Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-7-1] Comprehensive Understandings on Reliability Modulations in Compressive Stressed (100)- and(110)-Orientated Silicon CMOSFETs

J. Chen¹, I. Hirano¹, M. Saitoh¹, K. Tatsumura¹, Y. Mitani¹ (1.Advanced LSI Tech. Lab., Corporate Research & Development Center, Toshiba Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-7-2] Inelastic Acoustic Phonon Scattering in Ultra-thin SOI and Nanowire Structures

N. Mori^1,2 (1.Osaka Univ., 2.JST CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-7-3] Surface-Orientation/Strain Dependence of Quantum Confinement Effects in Si Monolayers for Future CMOS Devices

T. Mizuno¹, K. Higa¹, Y. Nakajima¹, D. Urata¹, Y. Abe¹, H. Akamatsu¹, Y. Nagata¹, K. Sato¹, J. Takehi¹, T. Sameshima² (1.Kanagawa Univ., 2.Tokyo Univ. of Agriculture and Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-7-4] Quantitative Analysis of Surface Potential Fluctuation at MOS interfaces Using Conductance Method

S .H. Shin¹, N. Taoka², M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-8-1] NBTI Induced Mobility Degradation - Models for TCAD and SPICE Applications

A. Chaudhary¹, S. Mahapatra¹ (1.IIT Bombay , India)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (151 - 160)

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