[PS-1-10] Electrical Characteristics of Anatase-TiO2 Films by Low Temperature Fabrication

M. Kimura¹, T. Nabatame², H. Yamada¹, A. Ohi², T. Chikyow², T. Ohishi¹ (1.Shibaura Inst. of Tech., 2.National Inst. for Materials Sci. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-11] Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species

T. Suwa¹, A. Teramoto¹, T. Muro², Y. Kinoshita², S. Sugawa¹, T. Hattori¹, T. Ohmi¹ (1.Tohoku Univ., 2.Japan Synchrotron Radiation Res. Inst. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-12] Double-Gated Junctionless Vertical Channel Poly-Si Thin-Film Transistors

Y. H. Chen¹, J. W. Lin¹, L. C. Yen¹, R. H. Kuo¹, Y. H. Lu¹, Y. H. Wu¹, P. Y. Kuo¹, T. S. Chao¹ (1.National Chiao Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-13] Multi-Step Deposition and Low-Temperature Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealing as a Promising Means for Gate-Last High-k/Metal Gate Application

K. S. Yew¹, C. H. Tang¹, D. S. Ang¹ (1.Nanyang Technological Univ. , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-14] Rate Determining Process and Loading Effects in Si Etching with HCl Gas

N. Morioka¹, J. Suda¹, T. Kimoto¹ (1.Kyoto Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-15] Ultra-High Resolution Depth Profiling of Carrier Concentration in P-implanted Silicon by HREELS

S.J. Park¹, N. Uchida¹, H. Arimoto^1,2, T. Tada¹, T. Kanayama¹ (1.National Inst. of Advanced Indus. Sci. and Tech., 2.Fujitsu Semiconductor Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-16] Characterization of As Implanted and Annealed Ge by Photoemission and Electrical Measurements

T. Ono¹, A. Ohta¹, H. Murakami¹, S. Higashi¹, S. Miyazaki² (1.Hiroshima Univ., 2.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-17L] Low-Temperature Formation of High-Quality Oxide for MOSFETs on Flexible Substrates

H. Hasegawa¹, Y. Iijima¹, K. Adachi¹, S. Nozaki¹, K. Uchida¹ (1.Univ. of Electro-Communications , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-1] Investigation of Electrical Performances for n-MOSFET Devices Integrating with Bonding and Thinning Technologies in 3D Integration

C. A. Cheng¹, C. H. Lu², C. H. Ho³, K. N. Chen⁴ (1.National Chiao Tung Univ., 2.National Chiao Tung Univ., 3.National Nano Device Lab., 4.National Chiao Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-2] Improvement of Crystallographic Quality of Electroplated Copper Thin-Film Interconnections for 3D TSVs

N. Murata¹, K. Suzuki¹, R. Furuya¹, O. Asai¹, H. Miura¹ (1.Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (421 - 430)

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