Si Quantum Well MOSFETs for Thin InSb Channel Layers

T. Ito¹, A. Kadoda¹, K. Nakayama¹, Y. Yasui¹, M. Mori¹, K. Maezawa¹, E. Miyazaki², T. Mizutani² (1.Univ. of Toyama, 2.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-2-1] Sub-Millimeter-Wave GaN-HEMT Tech.

K. Shinohara¹, D. Regan¹, A. Corrion¹, D. Brown¹, I. Alvarado Rodriguez¹, M. Cunningham¹, C. Butler¹, A. Schmitz¹, S. Kim¹, B. Holden¹, M. Micovic¹ (1.HRL Laboratories , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-2-2] A 0.25 μm Gate AlGaN/GaN HEMT for X-band Using RELACS Process

H. Koyama¹, Y. Kamo¹, S. Miwa¹, Y. Yamamoto¹, K. Onoe¹, A. Inoue¹, Y. Hirano¹ (1.Mitsubishi Electric Corp., High Frequency &Optical Device Works , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-2-3] Characteristics of InAlN/GaN Heterostructures Fabricated by Regrowth Technique

M. Hiroki^1,2, N. Watanabe¹, N. Maeda¹, H. Yokoyama¹, K. Kumakura², H. Yamamoto² (1.Photonics Labs., NTT Corporation, 2.Basic Research Labs., NTT Corporation , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-2-4] Improved effective channel electron velocity in AlGaN/GaN HEMTs with sub-100 nm gate-to-drain distance

K. Kodama¹, Y. Naito¹, H. Tokuda¹, M. Kuzuhara¹ (1.Univ. of Fukui , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-2-5] Suppression of off-state drain leakage current in AlGaN channel high electron mo-bility transistors on SiC substrate

T. Nanjo¹, Y. Suzuki¹, A. Imai¹, H. Okazaki¹, M. Suita¹, Y. Abe¹, E. Yagyu¹, H. Ohji¹ (1.Mitsubishi electric Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-2-6L] High Performance Normally Off Nanochannel Al2O3/GaN FinFET

K. S. Im¹, K. W. Kim¹, D. S. Kim¹, H. S. Kang¹, Y. W. Jo¹, R. H. Kim¹, C. H. Won¹, K. I. Jang¹, M. K. Kwon¹, S. M. Jeon¹, D. H. Son¹, Y. M. Kwon¹, J. H. Lee² (1.Kyungpook National Univ., 2.Samsung LED Corp. Ltd. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-3-1] InAs High-Electron Mobility Transistors on the Path to THz Operation

J. A. del Alamo¹, D. H. Kim² (1.Microsystems Tech. Laboratories, MIT, Cambridge,, 2.Previously with Teledyne Scientific , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-3-2] High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa

M. Kashiwano¹, J. Hirai¹, S. Ikeda¹, M. Fujimatsu¹, Y. Miyamoto¹ (1.Tokyo Tech , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-3-3] 120-GHz-band InP HEMT Amplifier with Gain-Enhanced Topology

M. Sato¹, S. Shiba¹, H. Matsumura¹, Y. Nakasha¹, T. Suzuki¹, N. Hara¹ (1.Fujitsu Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (171 - 180)

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