[PS-3-21] The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs

M. H. Liao¹, C. H. Chen¹, L. C. Chang¹, C. Yang¹, S. C. Kao¹, C. F. Hsieh² (1.National Taiwan Univ., 2.Industrial Tech. Research Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-22] A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring NBTI Degradation

J. Hong¹, Y. D. He¹, G. G. Zhang¹, X. Zhang¹ (1.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-23] Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress

D. Y. Choi¹, C. W. Sohn¹, H. C. Sagong¹, E .Y. Jeong¹, J. W. Jang¹, C. K. Baek¹, C. Y. Kang², J. S. Lee¹, Y. H. Jeong¹ (1.Pohang Univ. of Sci. and Tech. (POSTECH) , Republic of Korea, 2.SEMATECH , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-24] Effect of Anneal Process on Trap Properties in Metal/High-k Gate MOSFETs through RTN Characterization

H. F. Chiu¹, S. L. Wu², Y. S. Chang¹, S. J. Chang³, S. C. Tsai³, P. C. Huang³, O. Cheng⁴ (1.National Tsing Hua Uni., 2.Cheng Shiu Uni., 3.National Cheng Kung Uni., 4.United Microelectronics Corp. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-25] Characterization of Oxide Traps in 28 nm nMOSFETs with Different Uniaxial Tensile Stress by Utilizing Random Telegraph Noise (RTN)

B. C. Wang¹, S. L. Wu², C. Y. Wu³, C. W. Huang⁴, T. Y. Lu⁵, P. C. Huang⁶, S. J. Chang⁷ (1.Univ. of NCKU, 2.Univ. of CSU, 3.Univ. of CSU, 4.Univ. of CSU, 5.Univ. of CSU, 6.Univ. of NCKU, 7.Univ. of NCKU , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-26] 1/f Noise Characteristic in Independent-Double-Gate-FinFET

H. Sakai¹, S. Ouchi², K. Endo², T. Matsukawa², Y. X. Liu², Y. Ishikawa², T. Tsukada², T. Nakagawa², T. Sekigawa², H. Koike², M. Masahara², H. Ishikuro¹ (1.Keio Univ., 2.National Inst. of Advanced Indus. Sci. and Tech. (AIST) , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-27] Narrow Width Effects on High Frequency Performance and RF Noise of Sub-40nm Multi-finger nMOSFETs

K. L. Yeh¹, C. S. Chang¹, J. C. Guo¹ (1.National Chiao-Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-28] Impact of ZrO2 on Electron Trapping Behavior in 28 nm HKMG nMOSFETs by Low-Frequency (1/f) Noise and RTN Analysis

S. C. Tsai¹, S. L. Wu², C. Y. Wu³, C. W. Huang⁴, Y. Y. Lu⁵, B. C. Wang⁶, S. J. Chang⁷, J. F. Chen⁸, P. C. Huang⁹ (1.Univ. of NCKU, 2.Univ. of CSU, 3.Univ. of CSU, 4.Univ. of CSU, 5.Univ. of CSU, 6.Univ. of NCKU, 7.Univ. of NCKU, 8.Univ. of NCKU, 9.Univ. of NCKU , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-29] Lifetime evaluation on AC stress in High-K / Metal-Gate with Using Dual-Pulsed-Test-System (DPTS)

H. Mori¹, Y. Ikeda¹, T. Kato¹, T. Uemura¹, H. Matsuyama¹ (1.FUJITSU SEMICONDUCTOR LTD. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-30] Study of Off-State Breakdown and Hot-Carrier improvement by Suppression of Kirk Effect in LDMOS with Gradual Junction Structure

C. R. Yan¹, J. F. Chen¹, C. Y. Lin², H. T. Hsiu², Y. C. Liao², M. T. Yang², Y. C. Lin², H. H. Chen² (1.Univ. of Cheng Kung, 2.Corp. of Powerchip , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (461 - 470)

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