[H-5-2] A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar Cell

M. H. Liao¹, C. H. Chen¹, L. C. Chang¹, C. Yang¹, S. C. Kao¹, C. F. Hsieh² (1.National Taiwan Univ., 2.Industrial Tech. Research Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-5-3] Imaging of transient photoexcited current in solar cell using femtosecond laser pulses

H. Nakanishi¹, K. Salek², A. Ito¹, K. Takayama², I. Kawayama², H. Murakami², M. Tonouchi² (1.Dainippon Screen Manufac., 2.Osaka Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-5-1L] Low-Resistance TCO n-p Tunnel Recombination Junction for Multi-Cell Interface Layers in Thin-Film Solar Cells

K. Kanamoto¹, H. Tokioka¹, H. Konishi¹, M. Yamamuka¹, H. Fuchigami¹, Y. Tsuda¹, M. Inoue¹ (1.Mitsubishi Electric Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-6-1] Development of magnetic field microscopy for interconnection testing inside passivation layer

K. Kimura¹, Y. Mima¹, N. Oyabu², N. Kimura³, T. Inao⁴ (1.Univ. of Kobe, 2.Univ. of Kyoto, 3.Univ. of Osaka, 4.Murata Manufacturing Company , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-6-2] Characterization of Tungsten-Based Pillars Deposited by Helium Ion Microscope Equipped with Gas Injection System

K. Kohama¹, T. Iijima¹, M. Hayashida¹, S. Ogawa¹ (1.AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-6-3] MIM Capacitors with High Capacitance Density and Low Quadratic Voltage Coefficient Employing Canceling Effect by ZrLaOx/ZrTiOx/ZrLaOx Laminate Insulator

L. L. Chen¹, Y. B. Lin¹, C. C. Lin¹, Y. T. Chang¹, Y. H. Wu¹ (1.National Tsing Hua Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-6-4] Reliability of MIM Capacitors Under Pads for Au or Cu Wire Bonding

J. P. Gambino¹, C. Griffin¹, K. Watson¹, J. Malinowski¹, A. Cote¹, B. Guthrie¹, A. Vize¹, T. Aoki² (1.IBM Microelectronics , USA, 2.IBM Yamato Laboratory , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-6-5] Fat damascene wires for high bandwidth routing in silicon interposer

M. Detalle¹, J. Kim¹, P. Nolmans¹, X. Sun¹, J. Ryckaert¹, A. La Manna¹, G. Beyer¹, E. Beyne¹ (1.InterUniv. MicroElectronics Center , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-6-6L] Development of Cu/insulation layer interface crack extension simulation with single crystal plasticity

K. Koiwa^1,2, M. Omiya^2,3, N. Shishido^1,2, S. Kamiya^1,2, H. Sato^1,2, M. Nishida^1,2, T. Suzuki^2,5, T. Nakamura⁴, T. Nokuo^2,5 (1.Nagoya Inst. of Tech., 2.Japan Sci. and Tech. Agency, 3.Keio Univ., 4.Fujitsu labs. Ltd., 5.JEOL Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[I-1-1] Interface Control of III-Oxide/Nitride Composite Structures

M. Higashiwaki^1,2, S. Chowdhury³, B. R. Swenson³, U. K. Mishra³, T. Igaki⁴, T. Yamaguchi⁴, T. Honda⁴ (1.National Inst. of Information and Communications Tech.,, 2.PRESTO, Japan Science and Tech. Agency, , Japan, 3.Department of Electrical and Computer Engineering, Univ. of California, , USA, 4.Department of Electrical Engineering and Electronics, Kogakuin Univ., , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download