[PS-5-13] ESD Protection Design for V-band Low-Noise Amplifier Using RF Junction Varactors

M. H. Tsai¹, S. K. Huang¹, S. Hsu¹ (1.National Tsing Hua Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-14] A Simple and Useful Layout Scheme to Improve the CDM Robustness for the Input Buffer

T. C. Kao¹, J. H. Lee², C. H. Lien³, C. W. Chiu⁴, H. D. Su⁵ (1.Univ. of Tsing Hua, 2.Corp. of Richtek Tech., 3.Univ. of Tsing Hua, 4.Corp. of Richtek Tech., 5.Corp. of Richtek Tech. , Taiwan. R.O.C.)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-15] Impact on delay due to random telegraph noise under low voltage operation in logic circuits

S. Nishimura¹, T. Matsumoto¹, K. Kobayashi^2,3, H. Onodera^1,3 (1.Kyoto Univ., 2.Kyoto Inst. Tech., 3.JST CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-16L] Wide Dynamic Range Active Pixel Sensor Using a High-Sensitivity Gate/Body-Tied Photodetector with an Overlapping Control Gate

S. H. Jo¹, M. Bae¹, M. Lee¹, J. Y. Kim¹, P. Choi¹, J. K. Shin¹ (1.Univ. of Kyungpook National , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-1] Polycrystalline ZnO Mott-barrier diodes

Z. J. Liu¹, H. W. Huang¹, J. Y. Gan¹, T. R. Yew¹ (1.National Tsing-Hua Univ. , Taiwan, R.O.C.)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-2] Effects of in situ Surface Passivation of AlGaN/GaN MOS-HEMT: A Simulation Study

P. Somasuntharam¹, X. Liu¹, Y. C. Yeo¹, L. S. Tan¹ (1.National Univ. of Singapore , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-3] Comparison of Noise and Power Characteristics of Single- and Dual-Gate AlGaAs/InGaAs pHEMTs

C. C. Hu^1,2, S. H. Lin², D. M. Lin³, C. C. Huang⁴, Y. M. Hsin², C. K. Lin⁵, Y. C. Wang⁵, Y. J. Chan⁶ (1.Chung-Shan Inst. of Sci. and Tech., 2.National Central Univ., 3.Taiwan Semiconductor Manufac. Corp., 4.Yuan Ze Univ., 5.Win Semiconductors Corp., 6.Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-4] Microwave performance of InGaAs MOSFET with InP interfacial layer

H. D. Chang¹, B. Sun¹, L. Lu¹, G. M. Liu¹, W. Zhao¹, W. X. Wang², H. G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences, 2.Inst. of Physics of Chinese Academy of Sciences , china)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-5] Optical Absorption Properties of InP Porous Structures Formed by Electrochemical Process

Y. Kumazaki¹, T. Kudo¹, Z. Yatabe¹, T. Sato¹ (1.Hokkaido Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-6] AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact

O. Seok¹, W. Ahn¹, Y. Kim¹, M. Ha², M. Han¹ (1.Seoul Nat'l Univ., 2.Korea Electron. Tech. Inst. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

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