[K-8-3] Anisotropic effect of in-plane magnetic field on spin interference in an InGaAs based ring array

S. Tantiamornpong¹, F. Nagasawa¹, M. Kohda¹, J. Nitta¹ (1.Univ. of Tohoku , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[K-8-4] Detection of magneto-optical effects in optical waveguides in close contact with thin film of GdFe alloy

K. Nishibayashi¹, H. Munekata¹, H. Yoneda², K. Kuga³ (1.Tokyo Tech., 2.Univ. of Electro-Communications, 3.Japan Broadcasting Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[K-9-1] Room-Temperature Detection of Spin-Accumulation Signals in a Silicon-Based MOSFET Structure with a Schottky-Tunnel Contact

K. Hamaya¹, K. Masaki¹, Y. Fujita¹, S. Yamada¹, K. Sawano², M. Miyao¹ (1.Department of Electronics, Kyushu Univ., 2.Res. Center for Silicon Nano-Sci., Tokyo City Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[K-9-2] Transient oblique Hanle signals observed in Co2MnSi/CoFe/n-GaAs with non-local four-terminal configuration

J. Shan¹, T. Akiho¹, K. Matsuda¹, M. Yamamoto¹, T. Uemura¹ (1.Hokkaido Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[K-9-3] Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

S. Iba¹, H. Saito¹, A. Spiesser¹, S. Watanabe², R. Jansen¹, S. Yuasa¹, K. Ando¹ (1.AIST, 2.Univ. of Tsukuba , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[K-9-4] Tunnel barrier thickness dependence of Hanle-type signals in CoFe/MgO/n-Si and CoFe/MgO/n-Ge junctions investigated through three-terminal configuration

T. Uemura¹, G. F. Li¹, J. Fujisawa¹, K. Kondo¹, K. Matsuda¹, M. Yamamoto¹ (1.Hokkaido Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[K-9-5] Effective creation of spin polarization in p-type Germanium from a Fe/GeO2 tunnel contact.

A. Spiesser¹, S. Watanabe², H. Saito¹, S. Yuasa¹, K. Ando¹ (1.National Inst. of Advanced Indus. Sci. and Tech. (AIST), 2.Tsukuba Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[K-9-6] Asymmetric bias voltage dependence in spin accumulation signals observed by the three-terminal Hanle measurements for CoFe/crystalline MgO/SOI devices

M. Ishikawa¹, H. Sugiyama¹, T. Inokuchi¹, T. Tanamoto¹, K. Hamaya², N. Tezuka³, Y. Saito¹ (1.Corporate R&D Center, Toshiba Corp., 2.Kyushu Univ., 3.Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[K-9-7] Effects of interface resistance asymmetry on magnetoresistance of spin transistor structures

T. Tanamoto¹, H. Sugiyama¹, T. Inokuchi¹, M. Ishikawa¹, Y. Saito¹ (1.Toshiba Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-1-1]

I. Omura¹ (1.Kyusyu Inst. of Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (351 - 360)

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