[E-7-4] Fabrication of IGZO Thin-Film Transistors with Film Profile Engineering

R.J. Lyu¹, H.C. Lin^1,2, T.Y. Huang¹ (1.NCTU, 2.National Nano Device Labs. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-7-5] Impact of Oriented Crystalline InGaZnO Semiconductor on Electrical Properties of Thin Film Transistor

S.S. Yen¹, H.H. Hsu¹, P. Chiou¹, C.H. Cheng², C.Y. Chang¹, Y.C. Lai³, C.P. Chang³, H.H. Lu³, C.S. Chuang³, Y.H. Lin³ (1.NCTU, 2.National Taiwan Normal Univ., 3.AU Optronics Corp. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-8-1] High Performance III-V MOS Technologies

M.J.W. Rodwell¹, S. Lee¹, C.-Y. Huang¹, D. Elias¹, V. Chobpattana², B.J. Thibeault¹, W. Mitchell¹, S. Stemmer², A.C. Gossard² (1.ECE Dept. Univ. of California, Santa Barbara, 2.Materials Dept. Univ. of California, Santa Barbara (USA))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-8-2] Hole Mobility Enhancements in Strained In_xGa_1-xSb Heterostructure PMOSFET

P.Y. Chang¹, X.Y. Liu², L. Zeng², G. Du² (1.School of Electronic and Computer Eng., Peking Univ., 2.Inst. of Microelectronics, Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-8-3] Body Width Dependence of Subthreshold Slope and On-Current in GaAsSb/InGaAs Double-Gate Vertical Tunnel FETs

K. Ohashi¹, M. Fujimatsu¹, Y. Miyamoto¹ (1.Tokyo Tech (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-8-4] RF Modeling of III-V FINFETs

E. Lind¹, C.B. Zota¹, L.E. Wernersson¹ (1.Lund Univ. (Sweden))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-1-1] Heated Ion Implantation Technology for High Performance SOI FinFETs

W. Mizubayashi¹, H. Onoda¹, Y. Nakashima¹, Y. Ishikawa¹, T. Matsukawa¹, K. Endo¹, Y.X. Liu¹, S. O'uchi¹, J. Tsukada¹, H. Yamauchi¹, S. Migita¹, Y. Morita¹, H. Ota¹, M. Masahara¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-1-2] Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC

Y. Kamata¹, M. Koike¹, E. Kurosawa¹, M. Kurosawa², H. Ota¹, O. Nakatsuka², S. Zaima², T. Tezuka¹ (1.Green Nanoelectronics Center (GNC), AIST, 2.Nagoya Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-1-3] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers

T. Goto¹, R. Kuroda², N. Akagawa², T. Suwa¹, A. Teramoto¹, X. Li², S. Sugawa^1,2, T. Ohmi¹, Y. Kumagai³, Y. Kamata³, K. Sibusawa³ (1.NICHe, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ., 3.LAPIS Semiconductor Miyagi Co., Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-1-4] Large Size InGaAs-o-I Substrates Fabricated by Direct Wafer Bonding on Si

E. Uccelli¹, N. Daix¹, L. Czornomaz¹, D. Caimi¹, C. Rossel¹, M. Sousa¹, H. Siegwart¹, C. Marchiori¹, J.M. Hartmann², K.T. Shiu³, C.W. Weng³, M. Krishnan³, M. Lofaro³, M. Kobayashi³, D. Sadana³, J. Fompeyrine¹ (1.IBM Zurich Research Laboratory, 2.CEA, LETI, 3.IBM T. J. Watson Research Center (Switzerland))

2014 International Conference on Solid State Devices and Materials |PDF Download

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