540件中(151 - 160)

[F-4-1] Nickel Compound and Alloy Contacts to Nanoscale Si, Ge, and InGaAs Channels

R. Chen¹、B.-M. Nguyen^1,2、W. Tang^2,3、S.A. Dayeh¹ (1.Univ. of California San Diego、2.Los Alamos National Laboratory、3.Univ. of California Los Angeles (USA))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-4-2] NiPt Silicide Agglomeration Caused by Stress Relaxation along <010> Direction in NiSi Grain

M. Mizuo¹、T. Yamaguchi²、X. Pages³、K. Vanormelingen³、M. Smits³、E. Granneman³、M. Fujisawa²、N. Hattori¹ (1.Renesas Semiconductor Manufacturing Co., Ltd.、2.Renesas Electronics Corp.、3.Levitech BV (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-4-3] Reduction of Parasitic Resistance in Ge nMOSFETs with NiGe/n⁺Ge Junctions by Two-step Phosphorus Ion Implantation

M. Koike¹、Y. Kamimuta¹、T. Tezuka¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-1] Depth Profile of Thermally Grown SiO₂ Film Density

R. Hasunuma¹、M. Hayashi¹、K. Yamabe¹ (1.Univ. of Tsukuba (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-2] Reduction of Defect State Density at SiO₂/SiC Interface Formed by the Thermal Oxidation Accompanied with Direct CO Generation

R. Kikuchi¹、Y. Fujino¹、K. Kita^1,2 (1.Univ. of Tokyo、2.JST-PRESTO (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-3] Estimation of Real SiC-MOS Characteristics by Using Novel High-Speed Pulse IV

N. Tega¹、D. Hisamoto¹、H. Yoshimoto¹、A. Shima¹、Y. Shimamoto¹ (1.Hitachi, Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-1] Fermi-level Unpinning at Sn/Ge Interfaces; First-principles Calculation

K. Kobinata¹、T. Nakayama¹ (1.Chiba Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-2] Impact of YScO₃ on Ge Gate Stack in Terms of EOT Reduction as Well as Interface

C. Lu^1,2、C.H. Lee^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-3] Origin of Self-limiting Oxidation of Ge in High-Pressure O₂ at Low Temperature

C.H. Lee^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-4] Very Low EOT in Ge MOS Devices with High Oxidation State Interfacial Layer

C.H. Lin¹、K.S. Chang-Liao¹、C.C. Li¹、L.J. Liu¹、T.M. Lee¹ (1.National Tsing Hua Univ. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

540件中(151 - 160)