The Japan Society of Applied Physics

540件中(351 - 360)

[PS-2-1] Joule Heating Induced Bonding Interface Improvement and Ti Breakthrough by Electron Bombardment for 40-μm Pitch of Cu TSV and Cu/Sn μ-Bump Pair

Y.J. Chang1、Y.S. Hsieh1、C.T. Ko1,2、W.C. Lo2、F.Y. Ouyang3、C.S. Wu4、Y.M. Cheng4、W.J. Chen4、K.N. Chen1 (1.NCTU、2.Electronics and Optoelectronics Res. Lab., ITRI、3.Department of Engineering and System Science, National Hsing Hua Univ.、4.Metal Industries R&D Centre (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

540件中(351 - 360)