[PS-1-2] Electrically Active Defects in GeSnSi/Ge Junctions Formed at Low Temperature

N. Taoka^1,2、T. Asano²、T. Yamaha²、T. Terashima²、S. Asaba²、O. Nakatsuka²、P. Zaumseil¹、G. Capellini¹、T. Schroeder¹、S. Zaima² (1.IHP、2.Nagoya Univ. (Germany))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-3] Effect of Kr/O₂ Mixed ECR Plasma Oxidation on Electrical Properties of Al₂O₃/Ge Gate Stacks Fabricated by ALD

Y. Nagatomi¹、Y. Nagaoka¹、K. Yamamoto¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-4] High-k ⁄ Ge Interface Passivation Using Cycling Ozone Oxidation

X. Yang^1,2、S.K. Wang¹、L. Han^1,2、X. Zhang²、B. Sun¹、H.D. Chang¹、W. Zhao¹、Z.H. Zeng^1,2、H.G. Liu¹、Y.P. Cui² (1.Inst. of Microelectronics of Chinese Academy of Science、2.Univ. of Southeast (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-5] Flexible Silicon-Germanium Devices With High-k/Metal Gate Stacks For Next Generation High Hole Mobility Channel Devices

J.M. Nassar¹、A.M. Hussain¹、J.P. Rojas¹、M.M. Hussain¹ (1.King Abdullah Univ. of Science and Technology (KAUST) (Saudi Arabia))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-6] Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Y. Liao¹、X. Ji¹、Q. Guo²、F. Yan¹ (1.Nanjing Univ.、2.Wuhan Xinxin Semiconductor Manufac.Company (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-7] Thickness Dependences of Stress, Poisson’s Ratio and Longitudinal Optical Phonon Lifetime in Ultrathin Strained-Silicon-on-Insulator

V. Poborchii¹、M. Hara¹、T. Tada¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-8] Assessment of Self Heating Effect (SHE) on Negative Bias Temperature Instability in SOI FinFETs under Circuit Operation

H. Jiang¹、Z.Y. Lun¹、B. Chen¹、G. Du¹、X.Y. Liu¹、X. Zhang¹ (1.Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-9] The Impact of Positive Bias Temperature Instabilities on Stacked High-k/Metal Gate Transistor with TiN Barrier Layer

D.C. Huang¹、J. Gong²、C.F. Huang¹、S.S. Chung³ (1.National Tsing Hua Univ.、2.Tunghai Univ.、3.NCTU (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-10] Recovery of Interface States Generated by Hot-Carrier Stress

Y. Yonamoto¹ (1.Hitachi, Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-11] Reliability of Polycrystalline HfO₂ Thin Films Directly Bonded to Si Substrates

R. Hasunuma¹、Y. Tomura¹、K. Yamabe¹ (1.Univ. of Tsukuba (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

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