[PS-3-3] Strain Effects on Monolayer MoS₂ Field Effect Transistors

L. Zeng¹, Z. Xin², P.Y. Chang², X.Y. Liu¹ (1.Inst. of Microelectronics, Peking Univ., 2.School of Electronic and Computer Engineering, Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-4] Impact of Trap Behavior in High-k/Metal Gate p-MOSFET with Incorporated Fluorine on Low-Frequency Noise Characteristics

T.–H. Kao¹, S.–L. Wu², C.–Y. Wu², Y.–K. Fang¹, P.–C. Huang¹, C.–M. Lai³, C.–W. Hsu³, Y.–W. Chen³, O. Cheng³, S.–J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-5] Initial and Long-Term Frequency Degradation on Ring Oscillators from Plasma Induced Damage in 65 nm Bulk and Silicon On Thin BOX processes

R. Kishida¹, A. Oshima¹, M. Yabuuchi¹, K. Kobayashi¹ (1.Kyoto Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-6] Gate Voltage Dependent 1/f Noise Variance Model in n-Channel MOSFETs

Y. Arai¹, H. Aoki¹, F. Abe¹, S. Todoroki¹, R. Khatami¹, M. Kazumi¹, T. Totsuka¹, T. Wang¹, H. Kobayashi¹ (1.Gunma Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-7] Electrical Characteristics of Novel Junctionless FinFET Utilizing Trench Structure for Extreme Scaling

M.–S. Yeh¹, Y.–C. Wu¹, M.–H. Wu¹, Y.–R. Jhan¹, M.–H. Chung¹ (1.National Tsing Hua Univ. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-8] Dopant Drive-in Path Analysis in Poly-silicon Filled in Trench type 3D-MOSFET using Atom Probe Tomography

K. Inoue¹, H. Takamizawa¹, Y. Shimizu¹, B. Han¹, Y. Nagai¹, F. Yano², Y. Kunimune³, M. Inoue⁴, A. Nishida⁴ (1.Tohoku Univ., 2.Tokyo City Univ., 3.Renesas Semiconductor Manufacturing Co., Ltd., 4.Renesas Electronics Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-9] High Performance Germanium n⁺/p Shallow Junction for the Scaled nMOSFET

C. Wang¹, C. Li¹, W. Huang¹, S.Y. Chen¹, H.K. Lai¹ (1.Semicond. Photonics Res. Center, Xiamen Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-10] Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO₂ and ZrO₂ nMOSFETs

S.L. Wu¹, B.C. Wang², Y.Y. Lu¹, S.C. Tsai², J.F. Chen², S.J. Chang^2,3, S.P. Chang^2,3, C.H. Hsu⁴, C.W. Yang⁴, C.G. Chen⁴, O. Cheng⁴, P.C. Huang^2,3 (1.Cheng Shiu Univ., 2.Inst. of Microelectronics and Department of Electrical Engineering, National Cheng Kung Univ., 3.Advanced Optoelectronic Tech. Center, National Cheng Kung Univ., 4.United Microelectronics Corp. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-11] New Concept of Planar Germanium MOSFET with Stacked Germanide Layers at Source/Drain

H. Xu¹, L. Sun¹, Y.–B. Zhang¹, Y.–Q. Xia¹, J.–W. Han¹, Y. Wang¹, S.–D. Zhang¹ (1.Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-12] Physical DC and Thermal Noise Models of 18nm DG Junctionless pMOSFETs

E.–Y. Jeong¹, M.J. Deen², C.–H. Chen², R.–H. Beak³, J.–S. Lee¹, Y.–H. Jeong¹ (1.Pohang Univ. of Sci. and Tech., 2.McMaster Univ., 3.SEMATECH (Korea))

2014 International Conference on Solid State Devices and Materials |PDF Download