[PS-8-13] Enhancement of Pyroelectric PZT Thick Film Sintered at Low Temperature on Pt-Si Substrate by Adding Pb₅Ge₃O₁₁

C.G. Wu¹、Q.X. Peng¹、J. Meng¹、X.Y. Sun¹、Y. Shuai¹、J.Q. Cao¹、W.B. Luo¹、W.L. Zhang¹ (1.Univ. of Electronic Sci. and Tech. of China (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-8-14] Effects of Pr Doping on the Scintillation Properties of CeBr₃ Crystals Grown by the Modified Micro-Pulling-Down Method

T. Ito¹、Y. Yokota²、S. Kurosawa^1,2、K. Kamada^2,3、J. Pejchal^2,4、Y. Ohashi¹、A. Yoshikawa^1,2,3 (1.IMR, Tohoku Univ.、2.NICHe, Tohoku Univ.、3.C&A Corp.、4.Inst. of Phys. AS CR (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-8-15] LiF/CaF₂/LiBaF₃ Ternary Fluoride Eutectic Scintillator

K. Hishinuma¹、K. Kamada^2,3、S. Kurosawa^1,2、A. Yamaji¹、J. Pejchal^2,4、Y. Yokota²、Y. Ohashi¹、A. Yoshikawa^1,2,3 (1.IMR, Tohoku Univ.、2.NICHe, Tohoku Univ.、3.C&A Corp.、4.Inst. of Phys. AS CR, Cukrovarnicka (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-8-16] Improvement of Scintillation Properties on Ce doped Y₃Al₅O₁₂ scintillator by divalent cations co-doping

K. Kamada^1,2、A. Nagura³、M. Nikl⁴、S. Kurosawa³、J. Pejchal^1,4、Y. Ohashi³、Y. Yokota¹、A. Yoshikawa^1,2,3 (1.NICHe, Tohoku Univ.、2.C&A Corp.、3.IMR, Tohoku Univ.、4.Inst. of Phys. AS CR (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-8-17] Electrical Transport Properties in Ternary NbMoS₂ Layer crystals

H.P. Hsu¹、R.S. Chen²、Y.H. Huang²、C.C. Pung²、Y.S. Huang² (1.Ming Chi Univ. of Tech.、2.National Taiwan Univ. of Sci. and Tech. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-8-18] Behavior of Focused Ga⁺ Beam Spot Milling and its Superimposition Propetry

H.M. Chen¹、P.J. Wu²、K.Y. Shen¹、C.H. Kuan^1,2 (1.Graduate Inst. of Electronics Engineering, National Taiwan Univ.、2.Graduate Inst. of Biomedical Electronics and Bioinformatics, National Taiwan Univ. (Taiwan))

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[PS-9-1] Analysis of Single- and Double-barrier Tunneling Diode Structures using Ultra-thin-CaF₂/CdF₂/Si Multilayered Heterostructures Grown on Si

K. Suda¹、Y. Kuwata¹、M. Watanabe¹ (1.Tokyo Tech (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-2] Diode like Behavior of IZO Junction with Superconducting Electrode at Low Temperatures

K. Makise¹、B. Shinozaki² (1.NICT、2.Univ. of Kyushu (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-3] Investigation and Mitigation of Work-Function Variation for III-V Heterojunction Tunnel FET

C.W. Hsu¹、M.L. Fan¹、P. Su¹ (1.NCTU (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-4] High–performance Fully–transparent Ni–doped ZnO Thin–film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

L.L. Huang¹、D.D. Han¹、Z.F. Chen^1,2、Y.Y. Cong¹、J. Wu^1,2、N.N. Zhao^1,2、J.C. Dong^1,2、F.L. Zhao^1,2、L.F. Liu¹、S.D. Zhang²、X. Zhang¹、Y. Wang¹ (1.Inst. of Microelectronics, Peking Univ.、2.Shenzhen Graduate School, Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード