[J-4-1] n⁺/p⁺-Single Doping Effects on Impurity Band Structure Modulation in Two Dimensional Si Layers

T. Mizuno¹、Y. Nakahara¹、Y. Nagamine¹、Y. Suzuki¹、Y. Nagata¹、T. Aoki¹、T. Sameshima² (1.Kanagawa Univ.、2.Tokyo Univ. of Agric. and Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-4-2] Mobility Model for Advanced SOI-MOSFETs Including Back-Gate Contribution

H. Zenitani¹、H. Miyamoto¹、H. Kikuchihara¹、U. Feldmann¹、H.J. Mattausch¹、M. Miura-Mattausch¹ (1.Hiroshima Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-4-3] On the Importance of Electron-electron Scattering for Hot-carrier Degradation

S. Tyaginov^1,2、M. Bina¹、J. Franco³、B. Kaczer³、T. Grasser³ (1.Inst. for Microelectronics, TU Wien、2.Ioffe Physical-Technical Inst.、3.imec (Austria))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-1] Drive Current Performance of Inversion Mode Ge CMOS Transistors

X. Gong¹、Y.–C. Yeo¹ (1.National Univ. of Singapore (Singapore))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-2] Strained Si_0.1Ge_0.9 on Strained-Si-on-Insulator (sSOI) pMOSFETs for Low-Power sSOI Based CMOS

K. Ikeda¹、Y. Moriyama¹、T. Irisawa¹、M. Ono¹、Y. Kamimuta¹、M. Oda¹、T. Miyaki¹、E. Kurosawa¹、T. Tezuka¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-3] Study of Si- and SiGe-on-Insulator Ω-gate Nanowire PMOS FETs by Low-frequency Noise Measurements

M. Koyama^1,2、M. Cassé¹、S. Barraud¹、P. Nguyen^1,3、G. Ghibaudo⁴、H. Iwai²、G. Reimbold¹ (1.CEA-LETI、2.Tokyo Tech、3.SOITEC、4.IMEP-LAHC (France))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-1] Ultra Low-Frequency Noise in Vertical MOSFETs Having Tunable Threshold Voltage Fabricated with 60 nm CMOS Technology on 300 mm Wafer Process

T. Imamoto^1,2、T. Endoh^1,2,3 (1.Graduate School of Engineering, Tohoku Univ.、2.ACCEL, JST、3.Center for Innovative Integrated Electronic Systems, Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-2] Comprehensive Studies on the Accuracy of Traps Characterization by Using Advanced Random Telegraph Noise Simulator

Y. Higashi¹、K. Matsuzawa¹、T. Ishihara¹ (1.Toshiba Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-3] Experiment Study on Random Telegraph Signal Noise in (110) pMOSFETS with 1nm EOT

J. Chen¹、Y. Mitani¹ (1.Toshiba Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-1-1] Polymeric Optical Devices with Printable and Flexible Electrode

Y. Ohmori¹、T. Yamamoto¹、K. Hiraoka¹、H. Kajii¹ (1.Osaka Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

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