[PS-6-5] High-frequency Performance In_0.49Ga_0.51P/In_0.4Ga_0.6As MOSFET

J.H. Zhou^1,2、H.D. Chang²、G.M. Liu²、H.O. Li¹、H.G. Liu² (1.Guangxi Experiment Center of Info. Sci. , Guilin Univ. of Electronic Tech.、2.Microwave Device and IC Department, Inst. of Microelectronics of Chinese Academy of Sciences (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-6] Reduction of Initial Threshold Voltage Shift in ALD-Al₂O₃/AlGaN/GaN MIS-HEMTs on Si Substrates by Post-deposition Annealing

T. Kubo¹、J. Freedsman¹、Y. Yoshida¹、T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-7] Observation of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

T.F. Chang¹、T.C. Hsiao¹、C.F. Huang¹、C.W. Chiu²、T.Y. Yang²、T.Y. Huang²、Y.C. Liang³、G. Samudra³ (1.Nat'l Tsing Hua Univ.、2.Richtek Tech. Corp.、3.Nat'l Univ. of Singapore (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-8] Study of HfO₂/AlGaN/GaN MOS-HEMT for High Power Application

W.C. Lan¹、P.C. Chin¹、Y.C. Lin²、J.S. Maa³、E.Y. Chang^2,4 (1.1Inst. of Photonic System, NCTU、2.2Inst. of Materials Sci. and Eng.,NCTU、3.Inst. of Lighting and Energy Photonics NCTU、4.Inst. of Electronics Engineering, NCTU (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-9] Electrical Characteristic Simulation of Novel AlGaN/GaN Vertical HEMT with Multi-Aperture and SiO₂ Current Blocking Layer

N.M. Shrestha¹、Y.Y. Wang¹、Y. Li¹、E.Y. Chang¹ (1.NCTU (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-10] Reduction in Mobility Difference between C-Axis-Aligned Crystalline IGZO-FET and Si-FET by Miniaturization

S. Matsuda¹、Y. Yamane¹、Y. Okazaki¹、T. Ishizu¹、Y. Kobayashi¹、H. Suzawa¹、A. Isobe¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-11] Fabrication and Characteristics of Fully–Transparent Al–Sn–Zn–O TFTs Fabricated on Glass at Low Temperature

Y.Y. Cong¹、D.D. Han¹、J. Wu^1,2、N.N. Zhao^1,2、Z.F. Chen^1,2、F.L. Zhao^1,2、J.C. Dong^1,2、S.D. Zhang²、X. Zhang¹、Y. Wang¹ (1.Inst. of Microelectronics, Peking Univ.、2.Shenzhen Graduate School, Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-12] Characteristics of Submicron Indium-Tin-Oxide Thin-Film Transistors Fabricated by Film Profile Engineering

Y.A. Huang¹、H.C. Lin^1,2、T.Y. Huang¹ (1.NCTU、2.National Nano Device Labs. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-13] Fabrication of High Performance Ultra-thin body SnO₂ Thin-Film-Transistors (TFTs) using Microwave Annealing

S.W. Moon¹、H.J. Jang¹、W.J. Cho¹ (1.Department of Electronic Materials Eng, Kwangwoon Univ. (Korea))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-14] Fully Transparent Dual-active-layer ITO/TZO TFT Fabricated on Glass Substrate at low-temperature

Z.F. Chen^1,2、D.D. Han²、N.N. Zhao^1,2、J. Wu^1,2、Y.Y. Cong²、J.C. Dong^1,2、F.L. Zhao^1,2、S.D. Zhang^1,2、X. Zhang^1,2、Y. Wang²、L.F. Liu² (1.Shenzhen Gradnate School, Peking Univ.、2.Inst. of Microelectronics, Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

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