[PS-14-4] Analysis of forward voltage and reverse recovery charge control of silicon PiN diodes

Y. Yamashita¹、S. Machida¹ (1.Toyota Central R&D Labs., Inc. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-5] Growth and investigation of stacking fault of 4H-SiC C-face homoepitaxial layers with 1° off-angle

K. Masumoto^1,2、H. Asamizu^1,3、K. Tamura^1,3、C. Kudou^1,4、J. Nishio^1,5、K. Kazutoshi^1,2、T. Ohno^1,6、H. Okumura^1,2 (1.FUPET、2.AIST、3.ROHM Co., Ltd.、4.Panasonic Corp.、5.Toshiba Corp.、6.Hitachi, Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-6] Tilt-implanted trench termination for SiC power devices

G.Y. Song¹、D.H. Cho¹、G.H. Song¹、G.S. Kim¹ (1.Sogang Univ. (Korea))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-7] Short-circuit capability of SiC power MOSFETs

T. Shoji^1,3、A. Soeno²、H. Toguchi²、S. Aoi¹、Y. Watanabe¹、H. Tadano³ (1.Toyota Central R&D Labs., Inc.、2.Toyota Mortor Corp.、3.Univ. of Tsukuba (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-8] Switching characteristics of a 4H-SiC IGBT with interface defects up to the nonquasi-static regime

I. Pesic^1,2、D. Navarro²、M. Fujinaga²、Y. Furui²、M. Miura-Mattausch¹ (1.Hiroshima Univ.、2.Silvaco Japan (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-9] Energy-band offset of AlN/Diamond(111) heterojunction determined by X-ray photoelectron spectroscopy

M. Imura¹、A. Tanaka¹、H. Iwai¹、J. Liu¹、M. Liao¹、Y. Koide¹ (1.NIMS (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-10] Schottky-barrier inhomogeneities in WC/p-diamond at high temperature

A. Fiori¹、T. Teraji¹、Y. Koide¹ (1.NIMS (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-11] Static and transient performance comparisons between diamond p+/p- diode and m-i-p+ (Metal-Intrinsic-p+) diode

A. Nawawi¹、K.J. Tseng¹、R. Rusli¹、G.A.J. Amaratunga^1,2、H. Umezawa³、S. Shikata³ (1.Nanyang Tech. Univ.、2.Univ. of Cambridge、3.AIST (Singapore))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-12L] Generation and suppression of oxidation byproducts at 4H-SiC C-face / SiO₂ interface characterized by infrared spectroscopy

H. Hirai¹、K. Kita^1,2 (1.The Univ. of Tokyo、2.JST-PRESTO (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-13L] Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS

J. Hasegawa¹、M. Noguchi²、M. Furuhashi²、S. Nakata²、T. Iwasaki¹、T. Kodera¹、T. Nishimura¹、M. Hatano¹ (1.Tokyo Inst. Of Tech.、2.Mitsubishi Electric Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

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