[G-1-1] Technology and Application Requirements of 2.5D/3D Field Programmable System-in-Package (SiP)

A. Rahman¹ (1.Altera Corp. (USA))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-2] Improvement of Motional Resistance through Concave TSV Design and Modification for Static Capacitance of TSV-Based Resonator

J.Y. Shih¹、Y.C. Chen²、C.H. Chiu²、C.L. Lo²、K.N. Chen¹ (1.NCTU、2.TXC Corp. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-3] Ultrawideband Ultralow PDN Impedance of Decoupling Capacitor Embedded Interposers Using Narrow Gap Chip Parts Mounting Technology for 3-D Integrated LSI System

K. Kikuchi¹、M. Ujiie²、M. Aoyagi¹、S. Takayama² (1.AIST、2.Arena Co., Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-4] Characterization of Vapor Deposited Polyimides and Process Integration with the Polymeric Liner for Via-Last/Backside-Via Cu-TSV Formation

T. Fukushima¹、M. Mariappan¹、J.C. Bea¹、K.W. Lee¹、M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-5L] Improved Leakage Current for TiO₂-Based MIM Capacitors by Embedding Ge Nanocrystals

Y.-H. Chen¹、M.-T. Yu¹、C.-C. Lin¹、Y.-H. Wu¹ (1.Natl. Tsing Hua Univ. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-1] Stress Distribution Pattern in Cross-Sectional 3D-LSI Examined by u-XRD

M. Mariappan¹、J.C. Bea¹、T. Fukushima¹、K.W. Lee¹、M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-2] Investigation of the Plasma Damage by Etching Process for TSV Formation in Via-last Backside-via 3D IC

Y. Sugawara¹、H. Hashiguchi¹、S. Tanikawa¹、H. Kino²、K. Lee³、T. Fukusima³、M. Koyanagi³、T. Tanaka^1,2 (1.Dept. of Bioengineering and Robotics, Tohoku Univ.、2.Dept. of Biomedical Engineering, Tohoku Univ.、3.NICHe, Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-3] Dominant Factors of Stress-Induced Migration in Electroplated Copper Thin Films Used for Through Silicon Via (TSV) Interconnections

K. Suzuki¹、R. Furuya¹、H. Miura¹ (1.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-4] Suppression of Cu Ion Drift by Metal-Cap on Cu lines, Improving Interconnect Dielectric Reliability

M. Ueki¹、N. Furutake¹、N. Inoue¹、Y. Hayashi¹ (1.Renesas Electronics Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-5] Analysis of the Breakdown Voltage of an Area Surrounded by the Multi-trench Gaps in a 4kV Monolithic Isolator for a Communication Network Interface

Y. Takeuchi¹、R. Kuroda¹、S. Sugawa¹ (1.Graduate School of Engineering, Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

540件中(161 - 170)

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