2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (601 - 610)

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[PS-5-04] Analysis of Dynamic Characteristics of SiC SBD at High Switching Frequency Based on Junction Capacitance

^○R. Maeda¹, T. Okuda¹, T. Hikihara¹ (1.Kyoto Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-05] A Cyclic Switched-Capacitor Step-Down DC-DC Regulator with Enhanced Output Current

W. -L. Wang¹,^○H. Lin¹, C. -L. Yu¹ (1.National Chung Hsing Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-06] A 2.4 – 3.2 GHz Robust Self-Injecting Injection-Locked PLL

^○J. Yang¹, Z. Zhang¹, L. Liu¹, J. Liu¹, N. Wu¹ (1.State Key Laboratory of Super Lattice and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Univ. of Chinese Academy of Sciences (China))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-07] A 0.45-to-1.8 GHz Fully Synthesized Injection Locked Bang-Bang PLL with OFDAC to Enhance DCO resolution

^○J. Yang¹, Z. Zhang¹, L. Liu¹, J. Liu¹, N. Wu¹ (1.State Key Laboratory of Super Lattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Univ. of Chinese Academy of Sciences (China))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-08] Low Power UWB CMOS LNA using Resistive Feedback and Current-Reused Techniques

^○J. -C. Guo¹, C. -S. Lin¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-09] Reconfigurable Block-based Normalization Circuit for On-chip Object Detection

^○A. Luo¹, F. An¹, X. Zhang¹, L. Chen, H. J. Mattausch¹ (1.Hiroshima Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-10 (Late News)] A High-Efficiency Wide-Input-Voltage-Range CMOS Voltage Doubler Rectifier for RF Wireless Power Transfer Systems

T. -H. Tsai¹,^○W. -M. Cheng¹, Y. -L. Lo¹, W. -B. Yang² (1.National Kaohsiung Normal Univ. (Taiwan), 2.Tamkang Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-01] Impact of Substrate off-angle on the m-plane GaN Schottky Diodes

^○H. Yamada¹, H. Chonan¹, T. Takahashi¹, M. Shimizu¹ (1.AIST (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-02] RF Power Characteristics of the AlGaN/GaN HEMTs with Molecular Beam Deposition CeO₂ as Gate Insulator

Y. -S. Chiu¹,^○Y. Lin¹, Y. C. Lin¹, J. C. Huang¹, H. Iwai², K. Kakushima², E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan), 2.Tokyo Tech (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-03] Electron Mobility of Two-dimensional Electron Gas in InGaN Heterostructures: Effects of Alloy Disorder and Random Dipole Scatterings

^○T. Hoshino¹, N. Mori¹ (1.Osaka Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF Download

763 results (601 - 610)

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