2017 International Conference on Solid State Devices and Materials

Sep 19, 2017 - Sep 22, 2017
Sendai International Center

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763 results (251 - 260)

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[J-7-04 (Late News)] A Tri-axis MEMS Accelerometer with a Gold Electroplated Single-proof-mass and Segmented Electrodes

^○S. Otobe¹, D. Yamane¹, T. Konishi^1,2, T. Safu², H. Ito¹, S. Dosho¹, N. Ishihara¹, K. Machida¹, K. Masu¹ (1.Tokyo Tech (Japan), 2.NTT Advanced Tech. Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |Fri. Sep 22, 2017 2:25 PM - 2:40 PM |PDF Download

[K-1-01 (Invited)] Interface Dipole Layers between Two Dielectrics: Considerations on Physical Origins and Opportunities to Control Their Formation

^○K. Kita¹, H. Kamata¹, J. Fei¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 1:30 PM - 2:00 PM |PDF Download

[K-1-02] Direct Observation of Electrical Dipole and Atomic Density at High-k Dielectrics/SiO₂ Interface

^○N. Fujimura¹, A. Ohta¹, M. Ikeda¹, K. Makihara¹, S. Miyazaki¹ (1.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:00 PM - 2:20 PM |PDF Download

[K-1-03] Consideration on the interfacial dipole layer formation at non-SiO₂ oxide interfaces in the examples of MgO/Al₂O₃ and HfO₂/Al₂O₃

^○J. Fei¹, K. Kita¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:20 PM - 2:40 PM |PDF Download

[K-1-04] Characterization of near-interface border-traps in GeO₂/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy

^○W. -C. Wen¹, T. Sakaguchi¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:40 PM - 3:00 PM |PDF Download

[K-1-05] Generalized Picture of Work Function of a Metal with Schottky Interface

^○T. Nishimura¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 3:00 PM - 3:20 PM |PDF Download

[K-2-01] A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Technique in 0.18µm Standard CMOS Process for Energy Harvesting

^○M. Yoshida¹, K. Miyaji¹ (1.Shinshu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 3:40 PM - 4:00 PM |PDF Download

[K-2-02] A Wide Load Range Switched Capacitor DC-DC Converter with Adaptive Bias Comparator for Ultra-Low-Power Power Management Integrated Circuit

^○H. Asano¹, T. Hirose¹, Y. Kojima¹, N. Kuroki¹, M. Numa¹ (1.Kobe Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:00 PM - 4:20 PM |PDF Download

[K-2-03] Comparisons of Wire Bonding and Flip-Chip Bonding Assembly in High Frequency Hysteretic DC-DC Buck Converters

^○Y. Karasawa¹, Y. Gotou¹, S. Hara¹, T. Fukuoka¹, K. Miyaji¹ (1.Shinshu Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:20 PM - 4:40 PM |PDF Download

[K-2-04] A Compact Size, Wide-Range Efficiency, and Self-biasing CMOS-IPD Rectenna Using 2.5D Wafer-level Packing for a Biomedical Wireless Power Transfer System

^○K. -C. Lin¹, P. -C. Wu¹, T. -Y. Lin¹, Y. -C. Liu¹, W. -T. Hung¹, H. -H. Tsai¹, Y. -Z. Juang¹ (1.Chip Implementation Center (Taiwan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:40 PM - 5:00 PM |PDF Download

763 results (251 - 260)

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