[N-2-04] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diodes

^○S. Hayashi^1,2, T. Yamashita^1,3, J. Senzaki¹, M. Miyazato^1,4, M. Ryo^1,4, M. Miyajima^1,4, Y. Yonezawa¹, T. Kato¹, K. Kojima¹, H. Okumura¹ (1.AIST (Japan), 2.Toray Research Center Inc. (Japan), 3.SHOWA DENKO K.K. (Japan), 4.Fuji Electric Co. Ltd. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:40 PM - 4:55 PM |PDF Download

[N-2-05] Fabrication of MSM-Type Photodetector Using Sn-Doped α-Ga₂O₃ Films Grown by Mist Chemical Vapor Deposition

^○K. Rikitake¹, T. Kobayashi¹, T. Yamaguchi¹, T. Onuma¹, T. Honda¹ (1.Kogakuin Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 4:55 PM - 5:10 PM |PDF Download

[N-2-06 (Late News)] AlN metal-semiconductor field-effect transistors using Si-ion implantation

^○H. Okumura^1,2, S. Suihkonen³, J. Lemettinen³, A. Uedono¹, T. Palacios² (1.Univ. of Tsukuba (Japan), 2.MIT (USA), 3.Aalto Univ. (Finland))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 5:10 PM - 5:25 PM |PDF Download

[N-3-01 (Invited)] Monolithically Integrated GaN-on-Si Power Circuits

^○R. Reiner¹, P. Waltereit¹, B. Weiss¹, S. Moench², R. Quay¹, O. Ambacher³ (1.Fraunhofer IAF (Germany), 2.Univ. of Stuttgart (Germany), 3.Univ. of Freiburg (Germany))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 9:30 AM - 10:00 AM |PDF Download

[N-3-02] Unpassivated AlGaN/GaN HEMTs with Ideal Sub-threshold Swing (~60mV/decade) on Extremely High Quality Free-standing GaN Substrate

^○X. Liu¹, H. Gu¹, K. Li¹, J. He¹, K. Lai¹, D. Zhu¹, Y. Lu¹, W. He¹, J. Fang², J. Wang³, H. -C. Kuo⁴, Z. Liu⁵, W. Liu⁶, K. -W. Ang⁵, Y. Hao², K. Xu³, J. -P. Ao^1,2 (1.Shenzhen Univ (China), 2.Xidian Univ. (China), 3.SINANO, CAS (China), 4.National Chiao Tung Univ. (Taiwan), 5.National Univ. of Singapore (Singapore), 6.Fudan Univ. (China))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:00 AM - 10:15 AM |PDF Download

[N-3-03] Impact of Crystal Orientation on Ohmic Contact Resistance of Enhancement-Mode pGaN Gate High Electron Mobility Transistors on 200 mm Si Substrates

^○M. Van Hove¹ (1.IMEC (Belgium))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:15 AM - 10:30 AM |PDF Download

[N-3-04] Threshold voltages of Al₂O₃/AlGaN/GaN and AlTiO/AlGaN/GaN metal-insulator-semiconductor devices

^○S. P. Le¹, T. Ui¹, D. D. Nguyen¹, T. Suzuki¹ (1.JAIST (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:30 AM - 10:45 AM |PDF Download

[N-3-05] Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate

^○T. Sato¹, K. Uryu¹, J. Okayasu¹, M. Kimishima¹, T. Suzuki² (1.Advantest Labs. Ltd. (Japan), 2.JAIST (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 10:45 AM - 11:00 AM |PDF Download

[N-4-01 (Invited)] High Frequency GaN HEMTs for RF MMIC Applications

M. Micovic¹,^○D. F. Brown¹, D. Regan¹, J. Wong¹, Y. Tang¹, F. Herrault¹, D. Santos¹, S. D. Burnham¹, J. Tai¹, E. Prophet¹, I. Khalaf¹, C. McGuire¹, H. Bracamontes¹, H. Fung¹, A. Schmitz¹ (1.HRL Labs. (USA))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:00 PM - 2:30 PM |PDF Download

[N-4-02] High Performance Tri-Gate AlGaN/GaN Power HEMTs

^○J. H. Lee¹, C. C. Hsu¹, Y. C. Lin¹, J. N. Yao¹, C. Y. Wu¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:30 PM - 2:45 PM |PDF Download