2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

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779 results (331 - 340)

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[PS-1-11] Enhanced Electrical Characteristics of FinFETs with Strained SiGe Super-Lattice Channel

^○B.-X. Lu¹, K.-S. Chang-Liao¹, Y.-L. Li¹, D.-B. Ruan¹, S.-H. Hsu¹, Y.-Z. Chien¹, K.-Y. Lai¹ (1.National Tsing Hua Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:05 AM - 11:07 AM |PDF Download

[PS-1-12] A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell

^○P.K. Huang¹, H.Y. Chen¹, S.J. Wang^1,2, R.M. Ko², Y.C. Huang¹, M.H. Chiang¹ (1.Dept. of Electrical Eng., National Cheng Kung Univ. (Taiwan), 2.College of Electrical Eng. and Computer Sci., National Cheng Kung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:07 AM - 11:09 AM |PDF Download

[PS-1-13] Theoretical Investigation of Performance Improvement in GeSn/SiGeSn TFET withDouble Type-II Staggered Heterojunction

^○Y. Xu¹, H. Wang¹, G. Han¹, Y. Liu¹, Y. Hao¹ (1.Xidian Univ. (China))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:09 AM - 11:11 AM |PDF Download

[PS-1-14] Novel Multi-Flux Device Simulation Method Applied to 2DEG Analyses- Drift Diffusion with subbands -

K. Fukuda¹, J. Hattori¹,^○ H. Asai¹, T. Ikegami¹ (1.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:11 AM - 11:13 AM |PDF Download

[PS-1-15] Scalability and V_th Sensitivity Assessment of Core-Shell Junctionless MOSFET

^○N. Jaiswal¹, A. Kranti¹ (1.Indian Institute of Technology Indore (India))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:13 AM - 11:15 AM |PDF Download

[PS-1-16] Impact of Hafnium Oxide-Based Ferroelectric Material on Monolayer Black Phosphorus Transistor for Negative Capacitance and Memory Application

^○K.-T. Chen¹, Y.-F. Chung¹, Y.-T. Tang³, M.-H. Lee², S.-T. Chang¹ (1.National Chung Hsing Univ. (Taiwan), 2.National Taiwan Normal Univ. (Taiwan), 3.Taiwan Semiconductor Research Institute (TSRI) (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:15 AM - 11:17 AM |PDF Download

[PS-1-17] Calculation of interfacial energy for design of phase change materials

^○Y. Kim¹, M. Choi², H. Choi³, J. Ahn² (1.KIST (Korea), 2.Univ. of Hanyang (Korea), 3.Univ. of Cologne (Korea))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:17 AM - 11:19 AM |PDF Download

[PS-1-18] Memory window and retention time of double back gate Z²-FET

^○Y. Kim¹, S. Kwon², F. Gamiz³, P. Galy⁵, S. Cristolovenau⁴ (1.KIST (Korea), 2.Univ. of Hanyang (Korea), 3.Univ. of Granada (Spain), 4.INPG (France), 5.STMicron (France))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:19 AM - 11:21 AM |PDF Download

[PS-1-19 (Late News)] Extremely low temperature selective epitaxial processes for advanced CMOS applications

A. Hikavyy¹,^○C. Porret¹, E. Rosseel¹, P. Favia¹, R. Loo¹ (1.imec (Belgium))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:21 AM - 11:23 AM |PDF Download

[PS-1-20 (Late News)] Experiment and Modeling of Dynamical Hysteresis in thin film Ferroelectrics

^○P. Chang¹, Y. Zhang¹, G. Du¹, X. Liu¹ (1.Peking Univ. (China))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:23 AM - 11:25 AM |PDF Download

779 results (331 - 340)

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