2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

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779 results (381 - 390)

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[PS-4-12] Diamond Schottky barrier diodes on half-inch single-crystal wafers fabricated by Minimal Fab System

^○T. Hanada¹, H. Umezawa², S. Ohmagari², D. Takeuchi², J. Higedon Kaneko¹ (1.Hokkaido Univ. (Japan), 2.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:07 AM - 11:09 AM |PDF Download

[PS-4-13] Characterization of defects in diamond PiN diodes by electron beam induced current

^○H. Umezawa^1,2, T. Shimaoka³, K. Driche⁴, E. Gheeraert^2,5, S. Koizumi³, D. Takeuchi¹ (1.AIST (Japan), 2.Univ. Grenoble Alpes, CNRS, Grenoble INP, Inst. Neel (France), 3.NIMS (Japan), 4.DiamFab (France), 5.Univ. Tsukuba (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:09 AM - 11:11 AM |PDF Download

[PS-4-14] Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE

^○F. Shintaku¹, Y. Kangawa^1,2,3, J. Iwata⁴, A. Oshiyama³, K. Shiraishi³, A. Tanaka³, H. Amano³ (1.Dept. Aeronautics and Astronautics, Kyushu Univ. (Japan), 2.RIAM, Kyushu Univ. (Japan), 3.IMaSS, Nagoya Univ. (Japan), 4.AdvanceSoft Corp. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:11 AM - 11:13 AM |PDF Download

[PS-4-15] Positive Shifting of Threshold Voltage of Nano-Channel (NC) AlGaN/GaN HEMTs with Post Gate Annealing (PGA) Modulation

^○S. Mazumder¹, Y.H. Wang¹ (1.National Cheng Kung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:13 AM - 11:15 AM |PDF Download

[PS-4-16] Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before Activation Annealing

^○R. Kamoshida¹, S. Murai¹, M. Akazawa¹ (1.Hokkaido Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:15 AM - 11:17 AM |PDF Download

[PS-4-17] Impacts of nitrogen plasma surface cleaning on threshold voltages of AlTiO/AlGaN/GaN MIS devices

^○D.D. Nguyen¹, Y. Deng¹, T. Suzuki¹ (1.JAIST (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:17 AM - 11:19 AM |PDF Download

[PS-4-18] High Frequency AlGaN/GaN T-gate HEMTs on Extreme Low Resistivity Silicon Substrates

C.-H. Li¹,^○Y. Liu¹, W.-C. Hsu², C.-Y. Chuang², J.-Z. Liu², S.S.H. Hsu¹ (1.National Tsing Hua Univ. (Taiwan), 2.Global Wafers Corp. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:19 AM - 11:21 AM |PDF Download

[PS-4-19] A Method for Accurate Extracting the Properties of Border Traps in Lateral GaN Power MOSFET with a Compact Distributed Network Model

^○R. Yin¹, Y. Li¹, W. Lin², C.P. Wen¹, Y.L. Hao¹, Y. Fu¹, M. Wang¹ (1.Inst. of Microelectronics, Peking Univ. (China), 2.School of Physics, Peking Univ. (China))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:21 AM - 11:23 AM |PDF Download

[PS-4-20] Analysis of Inversion Channel Mobility in a GaN-based MOSFET

^○D. Kikuta¹, T. Narita¹, T. Kachi² (1.Toyota Central R&D Labs., Inc. (Japan), 2.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:23 AM - 11:25 AM |PDF Download

[PS-4-21] Estimation of post-deposition annealing effects on electrical properties of ALD-SiO₂/AlGaN/GaN MIS-HEMTs

^○S. Yokoi¹, T. Kubo¹, T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:25 AM - 11:27 AM |PDF Download

779 results (381 - 390)

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