[K-6-05] Investigation of the Possible Origins of Lattice Distortion at the Surface of Thermally-Oxidized 4H-SiC (0001) based on the Physical Analysis of Remained Byproducts

^○A.D. Hatmanto¹, K. Kita¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 11:45 AM - 12:00 PM |PDF Download

[K-7-01 (Invited)] GaN Wet Etching Process for Power and RF Devices

^○F. Horikiri¹, N. Fukuhara¹, H. Ohta², N. Asai², Y. Narita¹, T. Yoshida¹, T. Mishima², M. Toguchi³, K. Miwa³, T. Sato³ (1.SCIOCS Co. Ltd. (Japan), 2.Hosei Univ. (Japan), 3.Hokkaido Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 1:00 PM - 1:30 PM |PDF Download

[K-7-02] High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz-Keldysh Effect and Avalanche Multiplication

^○S. Kawasaki¹, H. Fukushima¹, S. Usami¹, Y. Ando¹, A. Tanaka², M. Deki³, M. Kushimoto¹, S. Nitta³, Y. Honda³, H. Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ. (Japan), 2.NIMS (Japan), 3.IMaSS, Nagoya Univ. (Japan), 4.VBL, Nagoya Univ. (Japan), 5.Akasaki R.C., Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 1:30 PM - 1:45 PM |PDF Download

[K-7-03] Characterization of Ni/GaN(0001) Interfaces by Photoemission Measurements

^○K. Watanabe¹, A. Ohta¹, N. Taoka¹, H. Yamada², M. Ikeda¹, K. Makihara¹, M. Shimizu², S. Miyazaki¹ (1.Nagoya Univ. (Japan), 2.AIST GaN-OIL. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 1:45 PM - 2:00 PM |PDF Download

[K-7-04] Quick measurement method of carbon-related defect concentration in n-type GaN by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy

^○K. Kanegae¹, T. Narita², K. Tomita², T. Kachi³, M. Horita^3,1, T. Kimoto¹, J. Suda^1,3 (1.Kyoto Univ. (Japan), 2.Toyota Central R&D Labs. (Japan), 3.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 2:00 PM - 2:15 PM |PDF Download

[K-7-05] Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN

^○T. Nakano¹, K. Chokawa¹, Y. Harashima², M. Araidai^2,1, K. Shiraishi^2,1, A. Oshiyama², A. Kusaba³, Y. Kangawa^4,2, A. Tanaka², Y. Honda^2,1, H. Amano^2,1 (1.Graduate School of Engineerging, Nagoya Univ. (Japan), 2.Institute of Materials and Systems for Sustainability, Nagoya Univ. (Japan), 3.Computer Centre, Gakushuin Univ. (Japan), 4.Research Institute for Applied Mechanics, Kyushu Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Thu. Sep 5, 2019 2:15 PM - 2:30 PM |PDF Download

[M-1-01 (Invited)] Trillion-Node Engine: Open-Innovation IoT/CPS Platform- Pioneering Future of IoT for Everyone, by Everyone -

^○T. Sakurai¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 2:00 PM - 2:30 PM |PDF Download

[M-1-02 (Invited)] Energy-Efficient Body Area Network Transceiver Using Body-Coupled Communication

^○J. Yoo^1,2 (1.National Univ. of Singapore (Singapore), 2.N.1 Inst. for Health (Singapore))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 2:30 PM - 3:00 PM |PDF Download

[M-1-03] An Information Leakage Sensor Based on Measurement of Laser-Induced Opto-Electric Bulk Current Density

^○K. Matsuda¹, S. Tada¹, M. Nagata¹, Y. Li², T. Sugawara², M. Iwamoto², K. Ohta², K. Sakiyama², N. Miura¹ (1.Kobe Univ. (Japan), 2.The Univ. of Electro-Communications (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 3:00 PM - 3:15 PM |PDF Download

[M-2-01 (Invited)] Imbalanced Voltage Analysis of Series-connected Active PowerSemiconductor Devices Method in Power Electronics Systems forAutomotive Applications

^○M. Yamamoto¹ (1.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 3:45 PM - 4:15 PM |PDF Download