2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

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779 results (681 - 690)

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[PS-8-07] The Optimization of Ar/O₂ Mixed-plasma Treatment for Improving the Microwave-assisted In-Ga-Zn-O Nanofiber Thin Film Transistors

^○S.K. Cho¹, W.J. Cho¹ (1.Kwangwoon Univ. (Korea))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-8-08] PVD growth of monolayer SnS under S-rich condition toward piezoelectric application

^○H. Kawamoto¹, N. Higashitarumizu¹, M. Nakamura², I. Yonemori³, K. Wakabayashi³, K. Nagashio¹ (1.Univ. of Tokyo (Japan), 2.NIMS (Japan), 3.Kwansei Gakuin Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-8-09] Graphene/diamond (carbon sp²-sp³) heterojunctions as novel photoelectronic devices

^○Y. Imai¹, K. Ueda¹, Y. Mizuno¹, H. Asano¹ (1.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-8-10] A MoS₂ channel-based Ferro- FET with charge trapping and switching effects

^○M. Zhao¹, K. Huang¹, X. Liu¹, H. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences (China))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-8-11] New Contact-first Two-dimensional Transistor

^○Y.W. Kang¹, C.J. Su², T.H. Hou¹ (1.National Chiao Tung Univ. (Taiwan), 2.Taiwan Semiconductor Research Inst. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-8-12] Resistance change characteristics of spray-deposited carbon nanotube thin film with bending doformation

^○M. Kozono¹, H. Sato¹ (1.Mie Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-8-13] The Reduction of Substrate-induced Strain of Monolayer MoS₂ Grown on a Nonplanar Sapphire Substrate

^○C.Y. Chang¹, S.Y. Gu^1,2, H.T. Lin¹, M.S. Lai^1,2, C.L. Yu¹, H.C. Chou¹, S.Y. Lin¹, C. Chen¹, M.H. Shih^2,1 (1.Academia Sinica (Taiwan), 2.National Chiao-Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-8-14] Effect of thermal annealing at a low temperature on exciton dynamics in semiconducting MoTe₂ crystals

^○S. Hayashida¹, K. Watanabe², T. Taniguchi², K. Sawano¹, Y. Hoshi¹ (1.Tokyo City Univ. (Japan), 2.NIMS (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-8-15] Sensitivity study on different gate dielectric dependence of DG-CNTFET using atomistic simulation NEGF approach

^○C. Pandy¹, R. Narayanan², H. Mimura¹ (1.Shizuoka Univ. (Japan), 2.VIT Univ. (India))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

[PS-8-16] Fabrication of MoS₂ layers on free-standing GaN for heterojunction photoresponsive device applications

^○P. Desai¹, A.K. Ranade¹, R.D. Mahyavanshi¹, M. Tanemura¹, G. Kalita^1,2 (1.Nagoya Inst. of Tech. (Japan), 2.Frontier Res. Inst. for Material Sci. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 1:00 PM - 3:00 PM |PDF Download

779 results (681 - 690)

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