2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

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[PS-1-01] Withdrawn

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:45 AM - 10:47 AM |PDF Download

[PS-1-02] X-ray Photoelectron Spectroscopy Study of the Physical Chemistry of the TiN/Hf_0.5Zr_0.5O₂ Interface

^○N. Barrett^1,2,3, W. Hamouda^1,2,3, A. Pancotti^1,2,3, C. Lubin^1,2,3, L. Tortech^1,2,3, C. Richter⁴, U. Schroeder⁴ (1.CEA Saclay (France), 2.CNRS (France), 3.Univ. Paris Saclay (France), 4.NaMLab (Germany))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:47 AM - 10:49 AM |PDF Download

[PS-1-03] Study on Random Telegraph Noise of High-κ/Metal-Gate Gate-All-Around Poly-Si Nanowire Transistors

^○Y.-T. Chang¹, Y.-L. Tsai¹, K.-P. Peng¹, P.-W. Li¹, H.-C. Lin¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:49 AM - 10:51 AM |PDF Download

[PS-1-04] Systematic analysis of electron traps of HfSiON/SiO₂ nMOSFETs using TSCIS

^○G. Roh¹, H. Kim¹, Y. Kwon², B. Kang¹ (1.Pohang Univ. of Sci. and Tech. (Korea), 2.Univ. of Uiduk (Korea))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:51 AM - 10:53 AM |PDF Download

[PS-1-05] Characteristic Variability and Random Telegraph Noise of Gate-All-Around Silicon Nanowire MOSFETs with Asymmetric Dual Spacer Induced by Single Charge Trap

^○S.R. Kola¹, Y. Li¹, N. Thoti¹, C.-Y. Chen¹, W.-L. Sung¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:53 AM - 10:55 AM |PDF Download

[PS-1-06] Characteristics of Ni-silicided Schottky barrier MOSFET using Microwave annealing of low thermal budget

^○H.-S. Choi¹, E.-K. Hong¹, W.-J. Cho¹ (1.Univ. of Kwangwoon (Korea))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:55 AM - 10:57 AM |PDF Download

[PS-1-07] The Evaluation of PtHfSi/n-Si(100) Schottky Barrier Height by Boron Dopant Segregation with Short Annealing Duration

^○R.M.D. Mailig¹, M.G. Kim¹, S. Ohmi¹ (1.Tokyo Tech (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:57 AM - 10:59 AM |PDF Download

[PS-1-08] Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices

^○K. Iseri¹, W.-C. Wen¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:59 AM - 11:01 AM |PDF Download

[PS-1-09] Ge nMOSFETs with GeOx Passivation Formed by 450℃ Oxygen RTA Postoxidation

^○Y. Xu¹, H. Wang¹, G. Han¹, Y. Liu¹, J. Zhang¹, Y. Hao¹ (1.Xidian Univ. (China))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:01 AM - 11:03 AM |PDF Download

[PS-1-10] Effects of Plasma Nitrided Trilayer High-k Gate Dielectric on Electrical Characteristics of FinFET

^○K.-Y. Lai¹, K.-S. Chang-Liao¹, Y.-L. Li¹, D.-B. Ruan¹, S.-H. Hsu¹, Y.-Z. Chien¹, B.-X. Lu¹ (1.National Tsing Hua Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:03 AM - 11:05 AM |PDF Download

779 results (321 - 330)

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