2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

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779 results (351 - 360)

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[PS-2-07] Hot Carrier Injection Phenomenon due to Excessive Natural Local Self-Boosting Effect in 3D NAND Flash Memory

Y. Jeong¹,^○I. Ham¹, S.J. Baik², M. Kang¹ (1.Korea National Univ. of Transportation (Korea), 2.Hankyong National Univ. (Korea))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:57 AM - 10:59 AM |PDF Download

[PS-2-08] Improvement of Hf-based MONOS Nonvolatile Memory Characteristics by Si Surface Atomically Flattening

^○S. Ohmi¹, Y. Horiuchi¹, S. Kudoh¹ (1.Tokyo Tech (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:59 AM - 11:01 AM |PDF Download

[PS-2-09] "Development of PCM and OTS combined Macro-models for HSPICE Compatible Simulation"

^○B. K An¹ (1.Hanyang Univ. (Korea))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:01 AM - 11:03 AM |PDF Download

[PS-2-10] Polycrystalline Silicon MOSFET-based Multi-Layer Capacitorless DRAM (1T-DRAM) for the Embedded System

^○W.D. Jang¹, Y.J. Yoon², M.S. Cho¹, J.H. Jung¹, S.H. Lee¹, J. Jang¹, J.-H. Bae¹, I.M. Kang¹ (1.Kyungpook National Univ. (Korea), 2.Korea Inst. of Sci. and Tech. (Korea))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:03 AM - 11:05 AM |PDF Download

[PS-2-11] Novel Dot-Product Engine for Low-Voltage Analog Oxide ReRAM Array

^○H. Veluri¹, Y. Li¹, M. Sivan¹, J.X. Niu¹, U. Chand¹, J.F. Leong¹, E. Zamburg¹, S. Samanta¹, X. Gong¹, K.X. Fong¹, A.V.-Y. Thean¹ (1.National Univ. of Singapore (Singapore))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:05 AM - 11:07 AM |PDF Download

[PS-2-12] Operando observation of resistive switching in ReRAMby laser-excited photoemission electron microscope

^○Y. Okuda^1,2,3, J. kawakita^1,2, T. Taniuchi^1,2, H. Shima^1,4, A. Shimizu^3,4, Y. Naitoh^1,4, K. Kinoshita³, H. Akinaga^1,4, S. Shin^1,2 (1.AIST-UTokyo OIL (Japan), 2.ISSP Univ. Tokyo (Japan), 3.Tokyo Univ. of Sci. (Japan), 4.NeRI-AIST (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:07 AM - 11:09 AM |PDF Download

[PS-2-13] In-situ Observation of Resistive Switching Mechanism in SrCoO_x Based RRAM Device

^○H.-Y. Lo¹, G.-M. Huang¹, P.-H. Yeh², W.-W. Wu¹ (1.National Chiao Tung Univ. (Taiwan), 2.Tamkung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:09 AM - 11:11 AM |PDF Download

[PS-2-14] Low Power Characteristic of HfO₂ Based RRAM Device with Insertion of Si Film

^○X. Ding¹, Y. Feng¹, W. Shen¹, L. Liu¹ (1.Peking Univ. (China))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:11 AM - 11:13 AM |PDF Download

[PS-2-15] Physics in HRS-LRS Switching in Vacancy Modulated Conductive Oxide (VMCO) Memories

^○T. Nakanishi¹, K. Chokawa², M. Araidai^2,1, T. Nakayama³, K. Shiraishi^2,1 (1.Nagoya Univ. (Japan), 2.Inst. of Materials and System for Sustainability, Nagoya Univ. (Japan), 3.Chiba Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:13 AM - 11:15 AM |PDF Download

[PS-2-16] Failure and Recovery of Double-Layer CBRAM Studied by In-Situ TEM

^○M. Arita¹, R. Ishikawa¹, K. Arima¹, A. Tsurumaki-Fukuchi¹, Y. Takahashi¹, M. Kudo², S. Matsumura² (1.Hokkaido Univ. (Japan), 2.Kyushu Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:15 AM - 11:17 AM |PDF Download

779 results (351 - 360)

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