2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

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779 results (261 - 270)

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[M-2-02 (Invited)] Overcoming Barriers to the Adoption of WBG Semiconductors for Power Electronics and a more Electric Future

^○I.C. Kizilyalli¹, E.P. Carlson², Z. Rahman², D.W. Cunningham¹ (1.U.S. Department of Energy (USA), 2.Booz Allen Hamilton (USA))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:15 PM - 4:45 PM |PDF Download

[M-2-03 (Invited)] Development of α-Ga₂O₃ Power Devices by MIST EPITAXY®

^○T. Shinohe¹ (1.FLOSFIA Inc. (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:45 PM - 5:15 PM |PDF Download

[M-2-04] Low V_F 4H-SiC NiP Diodes Using Newly Developed Low Resistivity p-type Substrates

^○A. Koyama^1,2, M. Sometani¹, K. Takenaka^1,3, K. Nakayama¹, A. Miyasaka^4,1, K. Kojima¹, K. Eto¹, T. Kato¹, J. Senzaki¹, Y. Yonezawa¹, H. Okumura¹ (1.AIST (Japan), 2.Mitsubishi Electric Corp. (Japan), 3.Fuji Electric Co., Ltd. (Japan), 4.SHOWA DENKO K. K. (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 5:15 PM - 5:30 PM |PDF Download

[M-2-05 (Late News)] Direct Observation of Spontaneous Polarization in Freestanding GaN Substrate Through Nuclear Magnetic Resonance

^○S. Sasaki^1,4, R. Kusanagi¹, K. Suzuki¹, Y. Mori², M. Kushimoto³, H. Amano³, K. Shiraishi³ (1.Niigata Univ. (Japan), 2.Osaka Univ. (Japan), 3.Nagoya Univ. (Japan), 4.AMED SENTAN (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 5:30 PM - 5:45 PM |PDF Download

[M-3-01 (Invited)] Integrated Hybrid MEMS Hydrogen Sensor with high sensitivity and wide dynamic range

^○H. Yamazaki¹, Y. Hayashi¹, K. Masunishi¹, T. Saito¹, D. Ono¹, N. Nakamura¹, A. Kojima¹ (1.Toshiba Corp. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 9:00 AM - 9:30 AM |PDF Download

[M-3-02] 3D SoC Design with TSV-less Power Supply Employing Highly Doped Silicon Via

^○K. Shiba¹, M. Hamada¹, T. Kuroda¹ (1.Keio Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 9:30 AM - 9:45 AM |PDF Download

[M-3-03] 2.5D Integration Using Inductive-Coupling TSV-less Miniature Interposer Achieving 317Gb/s/mm², 1.2pJ/b Data Transfer

^○C. Cheng¹, K. Shiba¹, M. Hamada¹, T. Kuroda¹ (1.Keio Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 9:45 AM - 10:00 AM |PDF Download

[M-3-04 (Late News)] An Energy Efficient Normally-Off CPU with 2.4 pW Negative Voltage Generator Featuring 60-nm Crystalline Indium-Gallium-Zinc Oxide FETs in BEOL

F. Akasawa¹, K. Furutani¹, T. Ishizu¹,^○K. Sasaki¹, Y. Yakubo¹, A. Isobe¹, T. Ando¹, T. Murakawa¹, T. Ikeda¹, K. Kato¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:00 AM - 10:15 AM |PDF Download

[M-3-05] Differential Signal Balancer Embedded in Metal Wiring Layers of Silicon LSI

^○M. Kameya¹, C. Yang-Min¹, K. Nakamura¹ (1.Kyushu Inst. of Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:15 AM - 10:30 AM |PDF Download

[M-4-01] An Ultra-Low-Power STT-MRAM-Based Multi-Core Associative Coprocessor with Inter-Core Pipeline Scheme for Large-Scale Full-Adaptive Nearest Pattern Search

^○Y. Ma¹, S. Miura¹, H. Honjo¹, S. Ikeda¹, T. Endoh¹ (1.Tohoku Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 3:30 PM - 3:45 PM |PDF Download

779 results (261 - 270)

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