2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

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779 results (371 - 380)

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[PS-4-02] Active Voltage Balancing for Series Connected IGBT System using Gate Delay Control

^○R.N. Tripathi¹, K. Harasaki¹, M. Tsukuda^2,1, I. Omura¹ (1.Kyushu Institute of Technology (Japan), 2.Green Electronics Research Institute Kitakyushu (GRIK) (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:47 AM - 10:49 AM |PDF Download

[PS-4-03] Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method

^○S. Sasaki¹, N. Mitsugi¹, S. Samata¹, W. Manabe², M. Tsukuda², H. Y.-Kaneta², I. Omura² (1.SUMCO Corp. (Japan), 2.Kyushu Institute of Technology (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:49 AM - 10:51 AM |PDF Download

[PS-4-04] Fabrication of 4H-SiC PiN Diodes on Substrate Grown by HTCVD Method

^○Y. Tokuda¹, H. Uehigashi¹, K. Murata², H. Tsuchida² (1.DENSO CORP. (Japan), 2.Central Research Institute of Electric Power Industry (CRIEPI) (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:51 AM - 10:53 AM |PDF Download

[PS-4-05] Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer

^○S. Torimi^1,2, Y. Obiyama¹, M. Tsukuda¹, I. Omura¹ (1.Kyushu Inst. of Tech. (Japan), 2.Toyo Tanso, Co., Ltd (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:53 AM - 10:55 AM |PDF Download

[PS-4-06] Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiC_xO_y Interlayer

^○K. Hashimoto¹, T. Doi¹, S. Shibayama¹, O. Nakatsuka^1,2 (1.Graduate School of Eng. Nagoya Univ. (Japan), 2.Inst. of Materials and Systems for Sustainability, Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:55 AM - 10:57 AM |PDF Download

[PS-4-07] The effect of biaxial stress on the carrier-transport properties at SiO₂/4H-SiC interfaces

^○W. Fu¹, A. Ueda², H. Yano¹, S. Harada², T. Sakurai¹ (1.Univ. of Tsukuba (Japan), 2.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:57 AM - 10:59 AM |PDF Download

[PS-4-08] A LOCal Oxidation of SiC (LOCOSiC) Process for 4H-SiC Integrated Circuits

B.-Y. Tsui¹, Y.-R. Jhuang¹,^○J.-C. Cheng¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:59 AM - 11:01 AM |PDF Download

[PS-4-09] Study on the Effects of Si Implantation on the Interface of 4H-SiC MOSFET

^○J.-Y. Jiang¹, J.-Q. Hung¹, P.-W. Huang¹, T.-L. Wu², C.-F. Huang¹ (1.National Tsing Hua Univ. (Taiwan), 2.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:01 AM - 11:03 AM |PDF Download

[PS-4-10] Synchrotron X-ray Photoelectron Spectroscopy on interface state densities of CVD-Grown SiO₂/4H-SiC Sturcures Treated by Post-Deposition Treatments

^○A. Kiyoi¹, T. Suwa², K. Kawase¹, A. Teramoto² (1.Mitsubishi Electric Corp. (Japan), 2.Tohoku Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:03 AM - 11:05 AM |PDF Download

[PS-4-11] Improved vertical Schottky barrier diodes characteristics by eliminating killer defects in heavily B-doped diamond substrates

^○A. Kobayashi¹, S. Ohmagari², D. Takeuchi², H. Umezawa², T. Saito¹ (1.Osaka Prefecture Univ. (Japan), 2.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 11:05 AM - 11:07 AM |PDF Download

779 results (371 - 380)

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