[K-8-01] A Machine Learning Based System Exploring the Correlation between Process Parameters and Device Characteristics in a 3D NAND Flash Memory Technology

^○Kuan Chih Chen¹, Ming Hsiu - Lee¹, Chia Hong - Lee¹, Yin Jen - Chen¹, Ke Chung - Wang¹, Chih Yuan - Lu¹ (1. MACRONIX INTERNATIONAL CO., LTD. (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 15:30 〜 15:45 |PDF ダウンロード

[K-8-02] Hardware Implementation of Temporal Encoded Spiking Neural Networks and Its Application to Rapid Gas Detection.

^○Jiseong Im^1,2, Donghee Kim^1,2, Woo Young Choi^1,2, Jong-Ho Lee^1,2 (1. Seoul National University (Korea), 2. Inter-Univ. Semiconductor Res. Center (ISRC) (Korea))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 15:45 〜 16:00 |PDF ダウンロード

[K-8-03] Compact Edge Vision Transformer with 86% Non-volatile Memory Bit Reduction by Percentile Clipping, Per Layer Quantization, and Quantization Aware Training

^○Ryuhei Yamaguchi¹, Ayumu Yamada¹, Naoko Misawa¹, Chihiro Matsui¹, Ken Takeuchi¹ (1. The University of Tokyo (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 16:00 〜 16:15 |PDF ダウンロード

[K-8-04] Noise Event Injection Training to Mitigate Inference Accuracy Degradation due to Non-Idealities of Event-based Vision Sensor and Computation-in-Memory

Kazuhide Higuchi¹, ^○Yinghao Sun¹, Chihiro Matsui¹, Ken Takeuchi¹ (1. Univ. of Tokyo (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 16:15 〜 16:30 |PDF ダウンロード

[M-1-01 (Invited)] Effect of Basal Plane Dislocation Structure on 1SSF Expansion Rate in 4H-SiC

^○Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Corporate R&D Center, Toshiba Corp. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:00 〜 14:30 |PDF ダウンロード

[M-1-02 (Invited)] DLTS studies of Deep Level Defects in GaN

^○Yutaka Tokuda¹ (1. Aichi Inst. of Tech. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:30 〜 15:00 |PDF ダウンロード

[M-1-03] Theoretical Study of Nitrogen Incorporation at the Steps on SiC(0001) Surface during CVD Growth

^○Souichiro - Yamauchi¹, Ichiro - Mizushima², Takashi - Yoda^2,3, Atushi - Oshiyama⁴, Kenji - Shiraishi^4,1 (1. Graduate School of Engineering, Univ. of Nagoya (Japan), 2. NuFlare Technology Inc. (Japan), 3. FIRST of Tokyo Tech. (Japan), 4. IMaSS, Univ. of Nagoya (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 15:00 〜 15:15 |PDF ダウンロード

[M-1-04] Sputtered β-Ga ₂O ₃ Crystallization by High Temperature Annealing on AlN/Si

^○Akira Sagawa¹, Norikazu Ito¹, Taketoshi Tanaka¹, Ken Nakahara¹ (1. ROHM Corp., Ltd. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 15:15 〜 15:30 |PDF ダウンロード

[M-2-01 (Invited)] Design of Novel Hetero-Nanostructures for Electronic and Optoelectronic Devices

Wei Wang¹, ^○Johnny Ho^1,2 (1. City Univ. of Hong Kong (Hong Kong), 2. Kyushu University (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:00 〜 16:30 |PDF ダウンロード

[M-2-02] Growth of High-Performance Single-Crystalline MoS ₂ on Sapphire Substrates Using an Industrial Reactor for Next-Generation Electronics

^○Henry Medina Silva¹, Yuanyuan Shi^1,2, Benjamin Groven¹, Sreetama Banerjee¹, Ankit Nalin Mehta¹, Iryna Kandybka¹, Akane Inoue¹, Joris Verdin¹, Pawan Kumar¹, Quentin Smets¹, Souvik Ghosh¹, Daire Cott¹, Stefanie Sergeant¹, Dries Vranckx¹, Sebastiaan Nijs¹, Rudy Verheyen¹, Tom Schram¹, Marco Claudio Torres Macario¹, Raf Rennen¹, Felix De Groef¹, Steven Brems¹, Pierre Morin¹, Cesar Javier Lockhart de la Rosa¹, Inge Asselberghs¹, Gouri Sankar Kar¹ (1. IMEC (Belgium), 2. Univ. of Sci. and Tech. of China (China))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:30 〜 16:45 |PDF ダウンロード