[PS-9-09] A Probabilistic-Bits Design based on Stochastic Ferroelectric Field-Effect Transistors

^○Sheng Luo¹, Yihan He¹, Baofang Cai¹, Xiao Gong¹, Gengchiau Liang¹ (1. National Univ. of Singapore (Singapore))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-10-01] Withdrawn

2023 International Conference on Solid State Devices and Materials

[PS-10-02] Ferroelectric properties of 50 nm size BaTiO₃ /polysiloxane nanocomposites processed by low temperature solution method

^○ChuanJun Wu¹, Juan Paolo Bermundo¹, Aimi Syairah Safaruddin¹, Atsuko Yamamoto², Yukiharu Uraoka¹ (1.NARA Inst. of Sci. and Tech. (Japan), 2. Merck Electronics Ltd. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-10-03] Fabrication of HfO₂ dielectric with κ-value exceeding 30 at room temperature

Mochamad Januar¹, Chun-Yen Li¹, ^○Kou-Chen Liu^1,2,3 (1. Chang Gung University (Taiwan), 2. Chang Gung Memorial Hospital (Taiwan), 3. Ming Chi University of Technology (Taiwan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

^○Dian Budiarti Kastian¹, Juan Paolo Bermundo¹, Yukiharu Uraoka¹ (1. Nara Inst. of Sci. and Tech. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-10-05] Characterization of Metal/IGZO Contact with Back-to-Back Schottky Diode

^○Shujuan Mao¹, Jianfeng Gao², Weibing Liu², Yanping He², Xu Chen², Gaobo Xu², Jinbiao Liu², Junfeng Li², Jun Luo², Jing Zhang¹, Yuke Li¹, Xiangsheng Wang¹, Wei Yu¹, Chao Tian¹, Hongbo Sun¹, Jinjuan Xiang¹, Guilei Wang¹, Chao Zhao¹ (1. Beijing Superstring Academy of Memory Technology (China), 2. Institute of Microelectronics, Chinese Academy of Sciences (China))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-10-06] Developing Fully Room-Temperature-Fabricated SnO_x-Based p-n Diodes via Ion-Beam-Assisted Deposition & Numerical Analysis

^○Mochamad Januar¹, Suhendro Purbo Prakoso², Jang-Hsing Hsieh^3,4, Kou-Chen Liu^1,5,4 (1. Chang Gung University (Taiwan), 2. National Taiwan University of Science & Technology (Taiwan), 3. National Yang Ming Chiao Tung University (Taiwan), 4. Ming Chi University of Technology (Taiwan), 5. Chang Gung Memorial Hospital (Taiwan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-10-07] Nano-Scale InSnO Transistors with an On-State Current of 325 μA/μm at V_D = 2 V

^○dengqin xu¹ (1. peking Univ (China))

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[PS-10-08] High Electrical Performance with Superior Bias Stabilities for an Oxide Thin-Film Transistor with Solution-Processed Ultra-Thin Semiconductor

^○Jun-Hyeong Park¹, Do-Kyung Kim¹, Jin-Hyuk Bae^1,2 (1. School of Electronic and Electrical Engineering, Kyungpook National Univ. (Korea), 2. School of Electronics Engineering, Kyungpook National Univ. (Korea))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-10-09] Temperature Dependence of GeS Crystallization by Using a Vapor Transport Method

^○Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download