[PS-1-14] Nano CMOS Devices Layout Optimization for Super-350GHz f_MAX in mmWave and Sub-THz CMOS Applications

^○Adhi Cahyo Wijaya¹, Jinq Min Lin¹, Jyh Chyurn Guo¹ (1. National Yang Ming Chiao Tung University (Taiwan))

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[PS-1-15] Enhancing Perceptual Artificial Intelligence Systems with a Dynamically Reconfigurable CMOS-Compatible Synaptic Transistor

^○Dong Hee LEE¹, Won-Ju Cho¹ (1. Kwangwoon university, Korea (Korea))

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[PS-2-01 (Late News)] Analysis of Inference Accuracy of Convolutional Neural Networks due to Quantization of Weights, Gradients, Input and Output Signals Stemming from Computation-in-Memory

^○Adil Padiyal¹, Ayumu Yamada¹, Naoko Misawa¹, Chihiro Matsui¹, Ken Takeuchi¹ (1.The University of Tokyo (Japan))

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[PS-2-02 (Late News)] Enhanced Ferroelectricity of HfZrO_x-based Ferroelectric Capacitors by Quenching with Liquid Nitrogen

^○Chun-I Kuo¹, Kai-Sheun Lee¹, Yi-Fan Chen¹, Yung-Hsien Wu¹ (1. Department of Engineering and System Science National Tsing Hua Univ. (Taiwan))

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[PS-2-03] Physical Insights into Depolarization Field, Sweeping Speed and Interfacial Layer Effect of 4.5V Ultra-Wide Memory Window and Long Endurance Ferroelectric HZO Memory

^○Yu Tzu Tsai¹, Zeng Kai Chen¹, Sheng Min Wang¹, Cheng Rui Liu¹, Yu Ting Chen¹, Zi Rong Huang¹, Chia Shuo Pai¹, Ying Tsan Tang*¹ (1. National Central Univ. (Taiwan))

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[PS-2-04] Remnant Polarization Enhancement in Ferroelectric HfO₂ Thin Films Induced by Mechanical Uniaxial Tensile Strain during Polarization Switching

^○Tatsuya Inoue¹, Takashi Onaya², Koji Kita^1,2 (1. Dept. of Materials Engineering, The Univ. of Tokyo (Japan), 2. Dept. of Advanced Materials Science, The Univ. of Tokyo (Japan))

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[PS-2-05] Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO₂-HfO₂-ZrO₂ Superlattice Gate Dielectric

Kaixuan Li¹, Yue Peng¹, wenwu xiao^2,1, Yan Liu¹, Genquan Han¹, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi’an UniIC Semiconductors Company Ltd. (China))

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[PS-2-06] Bilayer Type of Hf_1-xZr_xO₂-based Ferroelectric and Anti-ferroelectric Tunneling Junction

^○Fu- Sheng chang², Kuo-Yu Hsiang^3,1, Jia-Yang Lee¹, Zhao-Feng Lou¹, Zong-Han Li⁴, Jia-Hong Chen⁴, Cheng-Hong Liu¹, Ming Han Liao⁵, Chee Wee Liu^1,2, Min Hung Lee¹ (1. Graduate School of Advance Tech., National Taiwan Univ. (Taiwan), 2. Graduate Institute of Electronics Eng., National Taiwan Univ. (Taiwan), 3. Inst. of Electronics, National Yang Ming Chiao Tung University (Taiwan), 4. Inst. and Undergraduate Program of Electro-Optical Eng., National Taiwan Normal Univ. (Taiwan), 5. Department of Mechanical Eng., National Taiwan Univ. (Taiwan))

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[PS-2-07] Comparative Study of Variability in FeFET Memories with Different Erase Voltages

^○JAY LIU¹, Cheng-Hung Wu¹, Masaharu Kobayashi², Chun-Jung Su³, Vita Pi-Ho Hu¹ (1. National Taiwan Univ. (Taiwan), 2. Univ. of Tokyo (Japan), 3. National Yang Ming Chiao Tung Univ. (Taiwan))

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[PS-2-08] The Study of Trap Evolution by Gate Leakage Current in Hf_0.5Zr_0.5O₂ FeFET During Endurance Fatigue

^○Fengbin - Tian¹, Xiaoqing - Sun¹, Shuangshuang - Xu¹, Songwei - Li¹, Junshuai - Chai¹, Hao - Xu¹, Xiaolei - Wang¹, Wenwu - Wang² (1. Institute of Microelectronics of the Chinese Academy of Sciences (China), 2. Bureau of Major R&D Program Chinese Academy of Sciences (China))

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