[PS-11-10] Crystal growth, luminescence and scintillation properties of Er-doped La₂Hf₂O₇ single crystal

^○Yuui Yokota¹, Naomoto Hayashi¹, Takahiko Horiai¹, Kohei Yamanoi², Masao Yoshino¹, Nobuhiko Sarukura², Akira Yoshikawa¹ (1. Tohoku Univ. (Japan), 2. Osaka Univ. (Japan))

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[PS-11-11] First Principles Studies on Mg Impurity Incorporation into GaN during MOVPE Growth

^○Takashi Kuroda¹, Lisa Mizuno², Shuto Hattori³, Kenji Shiraishi^3,4 (1. Gifu Highschool (Japan), 2. Nanzan Highschool (Japan), 3. Graduate School of Engineering, Nagoya Univ. (Japan), 4. Institue of Materials and Sytemss for Sustainability, Nagoya Univ. (Japan))

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[PS-11-12] Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge₁_−x−ySi_xSn _y layers

^○Itsuki Sugimura¹, Masaya Nakata¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Takayoshi Katase², Masashi Kurosawa¹ (1. Nagoya Univ. (Japan), 2. Tokyo Tech. (Japan))

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[PS-11-13] Local strain distribution analysis in strained SiGe spintronics devices

^○Tomoki Onabe¹, Zhendong Wu¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Takahiro Naito¹, Kohei Hamaya¹, Akira Sakai¹ (1. Osaka Univ. (Japan), 2. JASRI (Japan))

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[PS-11-14] Optoelectronic properties of Ge₁₋_xSn_x/high-Si-content Si_yGe₁₋_y₋ _zSn_z double quantum wells formed by low-temperature MBE growth and post deposition annealing

^○Shigehisa Shibayama¹, Shiyu Zhang¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka¹ (1. Nagoya Univ. (Japan))

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[PS-11-15] Formation of Ultra-thin Nickel Silicide on SiO₂ Using a-Si/Ni/a-Si Structures for Oxidation Control

^○Keisuke Kimura¹, Noriyuki Taoka², Akio Ohta³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Aichi Inst. of Tec. (Japan), 3. Fukuoka Univ. (Japan))

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[PS-11-16] Oxygen Adsorption on Pseudomorphic Fe(111)/Ru(0001) Surface: A combined LEED analysis and First-Principles DFT Study.

^○Dhiman Banik¹, Yuka Nagamatsu¹, Takeshi Nakagawa¹ (1. Kyushu University (Japan))

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[PS-11-17] Enhancement of Mg Induced Lateral Crystallization of Amorphous Ge on Insulating Substrate by Two-Step Annealing

^○Atsuki - Morimoto¹, Towa Hirai¹, Ayato Takazaiku¹, Hajime Kuwazuru¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1. Natl. Inst. of Tech., Kumamoto College (Japan))

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[PS-11-18 (Late News)] Unveiling the role of trimethylaluminum in passivating InAs surface quantum dots

^○Hanif Mohammadi¹, Ronel Christian Roca¹, Hyunju Lee², Yoshio Ohshita¹, Naotaka Iwata¹, Itaru Kamiya¹ (1. Toyota Tech. Inst. (Japan), 2. Meiji Univ. (Japan))

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[PS-11-19 (Late News)] The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

^○ARUN KUMAR DHASIYAN¹, Swathy Jayaprasad¹, Frank Wilson Amalraj¹, Naohiro Shimizu¹, Osamu Oda¹, Kenji Ishikawa ¹, Masaru Hori¹ (1. Center for Low-temperature Plasma Sciences, Nagoya University (Japan))

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