[A-4-01] From h-BN to graphene: comprehensive structural characterizations of hybrid carbon-doped h-BN to understand its electrical conductivity

^○Supawan Ngamprapawat¹, Jimpei Kawase¹, Tomonori Nishimura¹, Kenji Watanabe², Takashi Taniguchi², Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan), 2. NIMS (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 10:45 〜 11:00 |PDF ダウンロード

[A-4-02] Characterization of Nanowire Light-Emitting Diodes with InP/InAsP Heterostructures Emitting in Telecom Band

Manami Okamoto¹, Tomoya Akamatsu¹, Katsuhiro Tomioka¹, ^○Junichi Motohisa¹ (1. Hokkaido Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 11:00 〜 11:15 |PDF ダウンロード

[A-4-03] Strong Gate Modulation Effect in Nanoscale TiN Channels

^○Yu- An Lai¹, Chin-Te Wang¹, Yu-An Chou¹, Shun-Tsung Lo¹, Thi Hien Do¹, Sheng-Di Lin¹ (1. National Yang Ming Chiao Tung University (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 11:15 〜 11:30 |PDF ダウンロード

[A-4-04] Thermal Desorption Study of PCz-sorted SWCNTs for Electronic Hourglass Device

^○Yang Xu¹, Jiayi Wang¹, Nannan You¹, Hong Dong³, Weihua Wang³, Xuelei Liang⁴, Shengkai Wang^1,2 (1. Inst. of Microelectronics of Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China), 3. Department of Electronic Sci. and Eng. and Tianjin Key Lab. of Photo-Electronic Thin Film Device and Tech., Nankai Univ. (China), 4. Key Lab. for the Physics and Chemistry of New Device, Peking Univ. (China))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 11:30 〜 11:45 |PDF ダウンロード

[A-6-01 (Invited)] Efficient Electron Spin Orientation and Nonlinear Spin Response in a Room-Temperature All-Semiconductor Spin Amplifier

^○Yuqing Huang^1,2, Irina A. Buyanova¹, Weimin M. Chen¹ (1. Linköping Univ. (Sweden), 2. Inst. of Semiconductors, Chinese Academy of Sciences (China))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 10:45 〜 11:15 |PDF ダウンロード

[A-6-02] First Demonstration of Bi-directional Sub-50 mV/dec MoS ₂-Hf _0.5Zr _0.5O ₂ Ferroelectric FET with Record High Memory Window Efficiency Exceeding the Theoretical Limit and High-Precision Analog Synapse

^○HENG XIANG¹, Yu-Chieh Chien¹, Lingqi Li¹, Haofei Zheng¹, Sifan Li¹, Yufei Shi¹, Kah-Wee Ang^1,2 (1. National Univ. of Singapore (Singapore), 2. Inst. of Materials Res. and Eng. (Singapore))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:15 〜 11:30 |PDF ダウンロード

[A-6-03] Heterogeneous Integration of 32 × 32 1S1R Crossbar Array using 2D Hafnium Diselenide on Si Platform and its Compute-in-Memory Hardware Featuring Low Latency and High Energy Efficiency

^○Samarth Jain¹, Sifan Li¹, Jianze Wang¹, Xuanyao Fong¹, Kah-Wee Ang^1,2 (1. National University of Singapore (Singapore), 2. Institute of Materials Research and Engineering, A*STAR (Singapore))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:30 〜 11:45 |PDF ダウンロード

[A-6-04] Artificial Excitatory and Inhibitory Neuron Enabled by a Single Threshold-Switching Double-Gate MoS ₂ Transistor

^○Hanxi Li¹, Jiayang Hu¹, Anzhe Chen¹, Yishu Zhang¹, Yang Xu¹, Bin Yu¹ (1. Zhejiang university (China))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:45 〜 12:00 |PDF ダウンロード

[A-6-05 (Late News)] Ultra Flexible and Highly Integrated All Solid-State Artificial Synapse Arrays Based on van der Waals 2D/Solid Electrolyte Heterostructures for Wearable Edge Computing

^○Yonghun Kim¹ (1. Korea Institute of Materials Science (Korea))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 12:00 〜 12:15 |PDF ダウンロード

[A-7-01 (Invited)] Micro-area Ultrafast Spectroscopy and the Application

^○Xinfeng Liu¹ (1. National Center for Nanoscience and Tech. (China))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 13:30 〜 14:00 |PDF ダウンロード