[D-2-1] Effect of Bias Sputtering on W and W-Al Schottky Contact Formation and Its Application to GaAs MESFETs

Y. Sekino, T. Kimura, K. Inokuchi, Y. Sano, M. Sakuta (1.R&D Group, Oki Electric Industry Co., Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-2-2] Thermally Enhanced Reactive Ion Beam Etching of InGaAsP

H. Yamada, Y. Inomoto, M. Kitamura, I. Mito, K. Asakawa (1.Opto-Electronics Res. Labs., NEC Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Roles of Materials Used in In-based Ohmic Contacts to n-type GaAs

Masanori Murakami, Y. C. Shih, H. J. Kim, W. H. Price (1.IBM Research Division, T. J. Watson Research Center, 2.AT&T Bell laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Low Resistance Refractory Ohmic Contact to p+GaAs and p+AlGaAs TLM Determination of p+GaAs/p+AlGaAs Contact Resistance

P. Rabinzohn, T. Usagawa, M. Kobayashi, T. Mishima, A. Yamane (1.Central Research Laboratory, Hitachi Ltd., 2.Exchange Researcher from Philips Research Organization)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-2-5] Growth Mechanism of SOI-GaAs Films on CaF2/Si Structures in the Electron-Beam Exposure and Epitaxy (EBE-Epitaxy) Technique

Hee Chul LEE, Tanemasa ASANO, Hiroshi ISHIWARA, Seijiro FURUKAWA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-2-6] MESFETs on GaAs/Fluoride/Si Structures

Kazuo TSUTSUI, Tanemasa ASANO, Hiroshi ISHIWARA, Seijiro FURUKAWA (1.Dept. of Applied Electronics, Graduate School of Science and Engineering Tokyo Institute of Technology)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-3-1] High Power Long Cavity T3 Laser with Extremely Narrow Beam

A. Shima, T. Yamawaki, H. Saito, H. Matsubara, H. Kumabe, W. Susaki (1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-3-2] Inverted Inner Stripe Laser with a p-GaAs Buffer Layer Grown by MOCVD

T. Yagi, K. Hasegawa, Y. Ohta, M. Kohno, H. Higuchi, S. Nita, S. Mitsui (1.Mitsubishi Electric Corp. Kitaitami Works)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-3-3] A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Hetero Barrier Blocking

Kazuhiko Itaya, Masayuki Ishikawa, Yukio Watanabe Koichi Nitta, Gen-ichi Hatakoshi, Yutaka Uematsu (1.Toshiba Research and Development Center)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-3-4] InGaP Visible Light Emitting Diodes on Si Substrates

Susumu Kondo, Shin-ichi Matsumoto, Haruo Nagai (1.NTT Opto-electronics Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download