[S-I-6-5] Time-Resolved Optically-Detected Magnetic Resonance of Luminescence from Si/Si1-xGex Superlattices

E. R. GLASER、T. A. KENNEDY、P. B. KLEIN、D. J. GODBEY、P. E. THOMPSON (1.Naval Research Laboratory)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-6-6] Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy

Hiroyuki YAGUCHI、Kaori TAI、Keizo TAKEMASA、Kentaro ONABE、Yasuhiro SHIRAKI、Ryoichi ITO (1.Department of Applied Physics, The University of Tokyo、2.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-7-1] High Mobility Two-Dimensional Electron/Hole Gases on Relaxed GeSi Buffer Layers:Material Issues and Device Potentials

Ya-Hong Xie (1.AT&T Bell Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-7-2] Transport Properties of Strained Si on Si1-xGex Substrate by Monte Carlo Simulation

Hiroshi Miyata、Toshishige Yamada、David K. Ferry (1.CSSER, Arizona State University、2.Advanced Process Div., Fujitsu Limited)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-7-3] Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive XAFS; Evidence for Strain-induced Surface Site Exchange

Hiroyuki OYANAGI、Kunihiro SAKAMOTO、Ryu SHIODA、Tsunenori SAKAMOTO (1.Electrotechnical Laboratory)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-7-4] Thermal Stability Characterization of Doped Layers and Heterostructures Grown by Si-MBE

M. R. Sardela Jr.、H. Radpisheh、W.-X. Ni、J.-E. Sundgren、G. V. Hansson (1.Dept. of Physics, Linkoping University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-8-1] Superlattices Based on Group IV Elemental Semiconductors(Si, Ge, α-Sn)

Janos Olajos、Jesper Engvall、Hermann G. Grimmeiss、Ulrich Menczigar、Werner Wegscheider Erich Kasper、Horst Kibbel、Hartmut Presting (1.Dept. of Solid State Physics, University of LUND、2.Walter Schottky Institut, TU Munchen, Am Coulombwall、3.Daimler-Benz Research Centre)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-8-2] Silicon-Germanium-Carbon Alloys Extending Si Based Heterostructure Engineering

A. R. Powell、S. S. Iyer (1.IBM Research Division, T.J. Watson Research Center)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-8-3] Formation of β-SiC Nanocrystals by the Relaxation of Si1-yCy Random Alloy Layers

A. R. Powell、F. K. LeGoues、S. S. Iyer (1.IBM Research Division, T.J. Watson Research Center)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-8-4] Epitaxial Growth of Strained Si1-yCy Alloy on Si(100) by Ultrahigh Vacuum Chemical Vapor Deposition Using Si2H6 and C2H2

Masayuki Hiroi、Keiko Miyanaga、Toru Tatsumi (1.Microelectronics Research Labs., NEC Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード