[C-6-01 (Invited)] An overview of recent trends in ALD/CVD chemistry for Advanced IC interconnects

〇Jean-Marc Girard¹、Venkateswara Pallem²、Benjamin Jurcik² (1.Air Liquide Advanced Materials、2.Air Liquide Innovation Campus Delaware)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 15:45 〜 16:15 |PDF ダウンロード

[C-6-02] Study on magnetic properties modulated by the heterojunction

〇Akinobu Yamaguchi^1,4、Shunya Saegusa^1,4、Naoya Akamatsu^1,4、Keisuke Yamada²、Takuo Ohkochi^3,4、Tomoko Ishihara⁴、Masaki Oura⁴ (1.Univ. of Hyogo、2.Gifu Univ.、3.JASRI、4.RIKEN)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:15 〜 16:22 |PDF ダウンロード

[C-6-03] Electrodeposition of Cu doped ZnS and evaluation of its electrochemical and photocatalytic property

〇Naoki Okamoto¹、Naohiro Matsuda¹、Takeyasu Saito¹ (1.Osaka Prefecture Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:22 〜 16:29 |PDF ダウンロード

[C-6-04] Synthesis of Pyrite from Aqueous Solution by using Electrodeposition and evaluation of its electrochemical property

〇Naoki Okamoto¹、Haruka Tamura¹、Takeyasu Saito¹ (1.Osaka Prefecture Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:29 〜 16:36 |PDF ダウンロード

[C-6-05] Application of Al₃Nb thin films for Al(111) orientation control

〇Mayumi B. Takeyama¹、Masaru Sato¹ (1.Kitami Inst. of Technol.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:36 〜 16:43 |PDF ダウンロード

[C-6-06] Preparation of Zr/ZrO_x/Pt structure for forming free resistive random access memory

〇Yuki Kawai¹、Masaru Sato¹、Mayumi B. Takeyama¹ (1.Kitami Institute of Technology)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:43 〜 16:50 |PDF ダウンロード

[D-1-01 (Invited)] RF GaN HEMT Product and Application for Base Station

〇Norihiko Ui¹ (1.Sumitomo Electric Device Innovations, Inc.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 14:00 〜 14:30 |PDF ダウンロード

[D-1-02] Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N₂/NH₃ Thermal Treatment

〇Daimotsu Kato¹、Yosuke Kajiwara¹、Akira Mukai¹、Hiroshi Ono¹、Aya Shindome¹、Po-Chin Huang¹、Matthew D. Smith¹、Jumpei Tajima¹、Toshiki Hikosaka¹、Masahiko Kuraguchi¹、Shinya Nunoue¹ (1.Toshiba Corp.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 14:30 〜 14:37 |PDF ダウンロード

[D-1-03] HfSiO_x-gate AlGaN/GaN MOS HEMTs with improved operation stability

〇Ryota Ochi¹、Toshihide Nabatame²、Tamotsu Hashizume¹、Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.、2.NIMS)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 14:37 〜 14:44 |PDF ダウンロード

[D-1-04] Demonstration of E-mode Operation in Planer Type MOS-HEMT Using Normally Depleted AlGaN/GaN Epitaxial Layer on Si Substrate

〇Takuma Nanjo¹、Tetsuro Hayashida¹、Tatsuro Watahiki¹、Naruhisa Miura¹ (1.Mitsubishi Electric Corp.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 14:44 〜 14:51 |PDF ダウンロード