[A-6-07] One to two-trap percolation transition of SILC in SiO2/HfO2

〇Andrea - Vici^1,2, Robin Degraeve², João Pedro Bastos², Ingrid De Wolf^2,1 (1.KU Leuven, 2.imec)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:50 PM - 4:57 PM |PDF Download

[A-6-08] TCAD Simulation for Capture / Emission of Carriers by Traps in SiN: Trap-Assisted Tunneling Model Extended for Capture of Carriers Injected via Fowler-Nordheim Tunneling

〇Michiru Hogyoku¹, Yoshinori Yokota¹, Kazuhito Nishitani¹ (1.KIOXIA Corp.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:57 PM - 5:04 PM |PDF Download

[A-6-09] Distribution Analysis of Minimum Operating Voltage in Fully Depleted SOI SRAM Cells

〇Hongkuan Yu¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi^1,2, Toshiro Hiramoto¹ (1.IIS, the University of Tokyo, 2.d.lab, the University of Tokyo)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 5:04 PM - 5:11 PM |PDF Download

[A-6-10] Contactless Characterization of SiO_x/c-Si by FTIR and μ-PCD applied to pMOS Devices

〇Mickael Lozach¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.Minimal Fab Promoting Organization, 2.National Institute of Advanced Industrial Science and Technology (AIST))

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 5:11 PM - 5:18 PM |PDF Download

[A-7-01 (Invited)] Enablement of Next Generation Nanosheet Technology

〇Nicolas Loubet¹, Curtis Durfee ¹, Julien Frougier¹, Shogo Mochizuki¹, Maruf Bhuiyan ¹, Ruqiang Bao ¹, Andrew Greene¹, Eric Miller¹, Indira Seshadri¹ (1.IBM Research)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:00 AM - 9:30 AM |PDF Download

[A-7-02] High Density & High Drive Current Elongated SGT Transistor for Logic Circuit Having Process Compatibility with 1.5nm node SGT SRAM

〇Kenichi Kanazawa¹, Yisuo Li³, Tetsuo Izawa¹, Koji Sakui¹, Georg Strof², Oskar Baumgartner², Gerhard Rzepa², Markus Karner², Zlatan Stanojevic², Nozomu Harada¹ (1.Semicon Consulting Ltd., 2.Global TCAD Solutions Ltd., 3.Unisantis Electronics Singapore Pre Ltd.)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:30 AM - 9:37 AM |PDF Download

[A-7-03] The Impact of Self-Heating Effect on Noise Margin and Propagation Delay
of Complementary FET Inverter

〇Songhan Zhao¹, Wangyong Chen¹, Linlin Cai¹, Gang Du¹ (1.Institute of Microelectronics Peking University)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:37 AM - 9:44 AM |PDF Download

[A-7-04] Width Dependence of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs down to 2nm Width

〇Zihao Liu¹, Tomoko Mizutani¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.Inst. of Indus. Sci., The Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:44 AM - 9:51 AM |PDF Download

[A-7-05] Improvement of performance of Si_0.8Ge_0.2/SOI p-FinFETs by ultrathin Y₂O₃ gate stacks with TMA treatment

〇Tsung-En Lee¹, Shao-Tse Huang², Chiung-Yi Yang², Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Yao-Jen Lee², Shinichi Takagi¹ (1.Univ. of Tokyo, 2.Taiwan Semiconductor Res. Inst.)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:51 AM - 9:58 AM |PDF Download

[A-7-06] Attainment of Low D_it and Reliable High-Ge-Content Si_1-xGe_xGate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si

〇HsienWen Wan¹, Yi-Ting Cheng¹, Chao-Kai Cheng¹, Yu-Jie Hong¹, Tien-Yu Chu¹, Chien-Ting Wu², Jueinai Kwo³, Minghwei Hong¹ (1.National Taiwan Univ., 2.Taiwan Semiconductor Res. Inst., 3.National Tsing Hua Univ.)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 9:58 AM - 10:05 AM |PDF Download