2021 International Conference on Solid State Devices and Materials

Sep 6, 2021 - Sep 9, 2021

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[H-5-04] Effect of hBN in Inducing Valleytronics Properties in hBN/Bilayer Graphene Commensurate Heterostructure

〇Afsal Kareekunnan¹, Hiroshi Mizuta^1,2, Manoharan Muruganathan¹ (1.JAIST, 2.Hitachi Camb. Lab.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 2:44 PM - 2:51 PM |PDF Download

[H-5-05] Effects of hBN thicknesses on light outcoupling from hBN-encapsulated TMDC monolayers

〇YUMA ODAGIRI¹, Syunya Hayashida¹, Kenji Watanabe², Takashi Taniguchi², Yusuke Hoshi¹ (1.Tokyo City Univ., 2.NIMS)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 2:51 PM - 2:58 PM |PDF Download

[H-5-06] Length Dependence of Phonon-Drag Component of Seebeck Coefficient in Si Calculated by Monte Carlo Simulation

〇Yuhei Suzuki¹, Yuma Fujita¹, Yoshinari Kamakura¹ (1.Osaka Inst. of Tech.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 2:58 PM - 3:05 PM |PDF Download

[H-5-07] Electrochemical Probing for Initiating Hydrogen Evolution on MoS₂ Nanosheets

〇Akichika Kumatani^1,2, Hiroto Ogawa¹, Yu Kobayashi², Atsuki Sato¹, Yasufumi Takahashi⁴, Yasumitsu Miyata³, Hitoshi Shiku¹, Yutaka Wakayama² (1.Tohoku Univ., 2.NIMS, 3.Tokyo Metro. Univ., 4.Kanazawa Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 3:05 PM - 3:12 PM |PDF Download

[H-6-01 (Invited)] Hybrid III-V/Si photonic device integration based on template-assisted selective epitaxy

Markus Scherrer¹, Preksha Tiwari¹, Pengyan Wen¹, Noelia Vico Trivino¹, Svenja Mauthe¹, Marilyne Sousa¹, Heinz Schmid¹, 〇Kirsten Moselund¹ (1.IBM Research Europe - Zurich)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 3:45 PM - 4:15 PM |PDF Download

[H-6-02] InP Nanowire Light-Emitting Diodes: Different Junction Geometry and Their Diode Properties

〇Shun Kimura^1,2, Yu Katsumi^1,2, Hironori Gamo^1,2, Junichi Motohisa^1,2, Katsuhiro Tomioka^1,2 (1.Univ. of Hokkaido, 2.Graduate School of Info. Sci. and Tech. and Res. Center for Integrated Quantum Electronics (RCIQE))

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:15 PM - 4:22 PM |PDF Download

[H-6-03] Charge neutrality point disparity based identification of ethanol gas molecules in activated carbon functionalized graphene

〇Sankar Ganesh Ramaraj¹, MANOHARAN MURUGANATHAN¹, OSAZUWA G AGBONLAHOR¹, HISASHI MAKI^1,2, MASASHI HATTORI², HIROSHI MIZUTA¹ (1.Japan Adv. Inst. of Sci. and Tech., 2.TAIYO YUDEN CO., LTD. R&D center)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:22 PM - 4:29 PM |PDF Download

[H-6-04] 50 ns Ultrafast P/E Operation in 2D Heterostructured Non-Volatile Memory Device

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Univ. of Tokyo, 2.Saitama Univ., 3.NIMS)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:29 PM - 4:36 PM |PDF Download

[H-6-05] Experimental Demonstration of High-Gain CMOS Inverter at Low V_dd Down to 0.5 V Consisting of WSe₂ n/p FETs

〇Takamasa Kawanago¹, Takahiro Matsuzaki¹, Ryosuke Kajikawa¹, Iriya Muneta¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:36 PM - 4:43 PM |PDF Download

[H-6-06] Universal Method on Charge Carrier Mobility and Series Resistance Extraction in Two-Dimensional Field-Effect Transistors

〇Yu-Chieh Chien¹, Xuewei Feng¹, Kai-Chun Chang², Wee Chong Tan¹, Sifan Li¹, Li Chen¹, Li Huang¹, Kah-Wee Ang¹ (1.National Univ. of Singapore, 2.National Sun Yat-Sen Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:43 PM - 4:50 PM |PDF Download

382 results (241 - 250)

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