2021 International Conference on Solid State Devices and Materials

Sep 6, 2021 - Sep 9, 2021

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382 results (101 - 110)

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[C-6-01 (Invited)] An overview of recent trends in ALD/CVD chemistry for Advanced IC interconnects

〇Jean-Marc Girard¹, Venkateswara Pallem², Benjamin Jurcik² (1.Air Liquide Advanced Materials, 2.Air Liquide Innovation Campus Delaware)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 3:45 PM - 4:15 PM |PDF Download

[C-6-02] Study on magnetic properties modulated by the heterojunction

〇Akinobu Yamaguchi^1,4, Shunya Saegusa^1,4, Naoya Akamatsu^1,4, Keisuke Yamada², Takuo Ohkochi^3,4, Tomoko Ishihara⁴, Masaki Oura⁴ (1.Univ. of Hyogo, 2.Gifu Univ., 3.JASRI, 4.RIKEN)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:15 PM - 4:22 PM |PDF Download

[C-6-03] Electrodeposition of Cu doped ZnS and evaluation of its electrochemical and photocatalytic property

〇Naoki Okamoto¹, Naohiro Matsuda¹, Takeyasu Saito¹ (1.Osaka Prefecture Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:22 PM - 4:29 PM |PDF Download

[C-6-04] Synthesis of Pyrite from Aqueous Solution by using Electrodeposition and evaluation of its electrochemical property

〇Naoki Okamoto¹, Haruka Tamura¹, Takeyasu Saito¹ (1.Osaka Prefecture Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:29 PM - 4:36 PM |PDF Download

[C-6-05] Application of Al₃Nb thin films for Al(111) orientation control

〇Mayumi B. Takeyama¹, Masaru Sato¹ (1.Kitami Inst. of Technol.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:36 PM - 4:43 PM |PDF Download

[C-6-06] Preparation of Zr/ZrO_x/Pt structure for forming free resistive random access memory

〇Yuki Kawai¹, Masaru Sato¹, Mayumi B. Takeyama¹ (1.Kitami Institute of Technology)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:43 PM - 4:50 PM |PDF Download

[D-1-01 (Invited)] RF GaN HEMT Product and Application for Base Station

〇Norihiko Ui¹ (1.Sumitomo Electric Device Innovations, Inc.)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:00 PM - 2:30 PM |PDF Download

[D-1-02] Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N₂/NH₃ Thermal Treatment

〇Daimotsu Kato¹, Yosuke Kajiwara¹, Akira Mukai¹, Hiroshi Ono¹, Aya Shindome¹, Po-Chin Huang¹, Matthew D. Smith¹, Jumpei Tajima¹, Toshiki Hikosaka¹, Masahiko Kuraguchi¹, Shinya Nunoue¹ (1.Toshiba Corp.)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:30 PM - 2:37 PM |PDF Download

[D-1-03] HfSiO_x-gate AlGaN/GaN MOS HEMTs with improved operation stability

〇Ryota Ochi¹, Toshihide Nabatame², Tamotsu Hashizume¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.NIMS)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:37 PM - 2:44 PM |PDF Download

[D-1-04] Demonstration of E-mode Operation in Planer Type MOS-HEMT Using Normally Depleted AlGaN/GaN Epitaxial Layer on Si Substrate

〇Takuma Nanjo¹, Tetsuro Hayashida¹, Tatsuro Watahiki¹, Naruhisa Miura¹ (1.Mitsubishi Electric Corp.)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 2:44 PM - 2:51 PM |PDF Download

382 results (101 - 110)

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